Mimix Introduces 20-40 GHz GaAs pHEMT MMIC LNA with Self Biasing Architecture

LNA includes simple, single supply bias with no need for negative voltages or active bias circuits

Houston, TX -- Mimix Broadband, Inc. has introduced a new GaAs MMIC three stage low noise amplifier that includes simple, single supply bias with no need for negative voltages or active bias circuits. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, this low noise amplifier covers the 20 to 40 GHz frequency bands and can operate at 3.0 volts or 5.0 volts. This device has a noise figure of 2.5 dB across the band and a small signal gain of 20 dB with a P1dB of 8 dBm.

This amplifier, identified as XL1000, serves as an excellent LNA, and is well suited for wireless communications applications such as millimeter-wave point-to-point radio, LMDS, SATCOM, and radar applications.

"The ease of biasing, and the combination of less than 2.5 dB noise figure from 24 to 36 GHz, and useful gain and power from 20 GHz to more than 43 GHz, make this an extremely useful circuit for many different applications, including front end LNA, RF and LO buffer amplifiers," stated Dr. Jim Harvey, CTO of Mimix Broadband, Inc.

Mimix performs 100% on-wafer RF, DC and noise figure testing on the XL1000, as well as 100% visual inspection to MIL-STD-883 method 2010. The chip also has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.

Engineering samples are available today from stock, and production quantities are available 2-4 weeks ARO.

Click here for the XL1000 datasheet and additional product information.

Source: Mimix Broadband