MicroWave Technology Launches 2 To 20 GHz Ultra-Broadband MMIC Amplifiers

Fremont, CA -- MicroWave Technology, Inc. (MwT), a wholly owned subsidiary of IXYS Corporation, released a family of three new 2 to 20 GHz Ultra-Broadband MMIC distributed amplifier products targeted at military and high-frequency test instrumentation markets. The applications include radar, electronic warfare systems (EW), electronic counter measures (ECM), EW threat simulator systems, broadband buffer amplifiers for frequency source, and wideband test equipment.

The first MMIC chip in the family, MMA-022020B, is a broadband medium power driver with output power of 22.5 dBm at 1 dB gain compression point. The typical small signal gain is 8dB across the extended frequency band of 1 to 22 GHz. The bias conditions are 7 V and 220 mA.

The second MMIC chip, MMA-022025B, is a broadband medium power amplifier with output power of 27 dBm at 1 dB gain compression point. The typical small signal gain is 7.5 dB across the extended frequency band of 1 to 26 GHz. The bias conditions are 8V and 290 mA.

The third MMIC chip, MMA-022030B, is a broadband power amplifier with output power of 29 dBm at 2 dB gain compression point (28 dBm from 17 GHz to 20 GHz). The typical small signal gain is 6.5 dB across the frequency band. The bias conditions are 9V and 490 mA.

All three MMIC chips are fully matched for both input and output. These MMIC chips also contain on-chip input/output blocking capacitors and DC supply RF choke circuitry and requires simple DC bias circuits and RF connections for operation and system integration. These broadband MMIC chips are realized by advanced 0.25um AlGaAs/InGaAs pHEMT technology. With thermal design, the MTTF of all three MMIC chips is over 1E6 hours for ambient temperature of 85C. These MMICs are suitable for space and Hi-rel applications.

SOURCE: MicroWave Technology, Inc.