Microsemi Launches New High-Voltage, Flangeless-Packaged RF MOSFETs

Irvine, CA -- Microsemi Corporation has announced the addition of the DRF100 and DRF1200 to its family of high-voltage, flangeless-packaged, RF MOSFET Power Products.

RF Power MOSFETs are used in RF generators for plasma generation, CO2 laser excitation, MRI equipment, broadband linear amplifiers and HF/VHF communications equipment.

The DRF100 is an RF Driver IC with an 8A output capable of driving high power, 500 to 1200V RF MOSFETs at frequencies up to 30 MHz. It also features a dynamic "anti-ring" function that prevents cross conduction of the MOSFETs in bridge or push-pull topologies.

The DRF1200 is an integrated solution comprised of the DRF100 RF driver IC and a high power 1,000V RF MOSFET output. The close proximity of the driver and MOSFET in a single package reduces circuit inductance compared to discrete alternatives.

The DRF100 is available in the new flangeless T3 package, while the DRF1200 is available in the new T2 flangeless package. To obtain the high power dissipation, the backside of the new packages is lapped to provide a thermal interface surface to mate with the system heat sink. The coplanar lead arrangement facilitates circuit layout and provides more than 2500 volts isolation between any terminal and the mounting surface.

Both devices are designed for Class C, D and E RF generator applications operating from 1 to 30MHz; as well as for pulsed power and modulator applications. DRF100 and DRF1200 evaluation boards are available from the factory and authorized Microsemi PPG distributors to enable rapid evaluation of device performance.