Microsemi Extends Advanced Silicon Carbide Portfolio With 1,500 Watt RF Power Transistor For UHF Pulsed Radar

IRVINE, Calif. (GlobeNewswire via COMTEX News Network) -- Microsemi Corporation (Nasdaq:MSCC), a leading manufacturer of high performance analog mixed signal integrated circuits and high reliability semiconductors, announced today the introduction of a new 1,500 watt RF power transistor for UHF pulsed radar applications, expanding its industry-leading portfolio of high power silicon carbide transistors.

Designated the Model 0405SC-1500M, the new device from Microsemi's RF Integrated Solutions group, utilizes state-of-the-art SiC technology to provide unparalleled 1,500W peak power performance in a compact single-ended package that replaces complex push-pull balun circuitry found in conventional silicon BJT or LDMOS solutions.

"We are very excited to lead the market with this silicon carbide broadband transistor specifically designed for UHF Band pulsed radar in military and aerospace applications," said Charles Leader, Microsemi RFIS Vice President. "This new 1,500 watt device demonstrates our ability to extend this advanced technology through aggressive investment. We now can support next-generation UHF radar designs with a full series of silicon carbide transistors having powers rated at 100 watts, 500 watts, 1000 watts and now the 0405SC-1500M at 1,500 watts.

The 0405SC-1500M is a high performance, common gate, class AB, high power transistor designed for UHF frequencies from 406 to 450 MHz. It is built with 100% gold metallization and gold wires in a hermetically sealed package providing highest reliability for weather radar and over the horizon radar applications.

System Benefits with 0405SC-1500M SiC transistors:
-- Single-ended simple impedance-matching design replaces complex push-pull balun circuitry
-- Industry's highest peak power for reduced system power: 4-way combination yields 5kW with margin
-- High operating voltage slashes power supply size and dc current demand
-- Low conducting current minimizes system noise effect
-- Extremely rugged performance improves system yields
-- 50% smaller size than equivalent silicon devices
-- All gold metallization and gold wire for military grade long term reliability
-- Hermetic, solder-sealed packaging extends lifetime operation

The 0405SC-1500M transistor utilizes new chip design and processing enhancements to offer state-of-the-art performance, notably in high power, small transistor and circuit size over the specified frequency range with 300us pulse width and 6% duty cycle.

0405SC-1500M Key Product Features:
-- Designed for 406 -- 450 MHz UHF radar
-- Medium Pulse Format: 300 us, 6%
-- 1,500 watt output power
-- High power gain: 8 dB Typ
-- Drain efficiency: 45 % @450MHz
-- Compression: In Compression
-- Vdd: +125V
-- Ruggedness capable of VSWR-T 5:1

Demo units for the entire line of Microsemi silicon carbide transistors are available now by contacting the factory or by email request to sic@microsemi.com. Technical datasheets are available on the Microsemi website at http://www.microsemi.com.

About Microsemi

Microsemi Corporation, with corporate headquarters in Irvine, California, is a leading designer, manufacturer and marketer of high performance analog and mixed-signal integrated circuits, high reliability semiconductors and RF subsystems. The company's semiconductors manage and control or regulate power, protect against transient voltage spikes and transmit, receive and amplify signals.

Microsemi's products include individual components as well as integrated circuit solutions that enhance customer designs by improving performance and reliability, battery optimization, reducing size or protecting circuits. The principal markets the company serves include implanted medical, defense/aerospace and satellite, notebook computers, monitors and LCD TVs, automotive and mobile connectivity applications. More information may be obtained by contacting the company directly or by visiting its website at http://www.microsemi.com.

The Microsemi Corporation logo is available at http://www.globenewswire.com/newsroom/prs/?pkgid=1233

"Safe Harbor" Statement under the Private Securities Litigation Reform Act of 1995: Any statements set forth in this news release that are not entirely historical and factual in nature, including without limitation statements concerning the introduction of a new 1,500 watt RF power transistor for UHF pulsed radar applications, expanding its industry-leading portfolio of high power silicon carbide transistors, are forward-looking statements. These forward-looking statements are based on our current expectations and are inherently subject to risks and uncertainties that could cause actual results to differ materially from those expressed in the forward-looking statements. The potential risks and uncertainties include, but are not limited to, such factors as rapidly changing technology and product obsolescence, potential cost increases, variations in customer order preferences, weakness or competitive pricing environment of the marketplace, uncertain demand for and acceptance of the company's products, adverse circumstances in any of our end markets, results of in-process or planned development or marketing and promotional campaigns, difficulties foreseeing future demand, potential non-realization of expected orders or non-realization of backlog, product returns, product liability, and other potential unexpected business and economic conditions or adverse changes in current or expected industry conditions, difficulties and costs of protecting patents and other proprietary rights, inventory obsolescence and difficulties regarding customer qualification of products. In addition to these factors and any other factors mentioned elsewhere in this news release, the reader should refer as well to the factors, uncertainties or risks identified in the company's most recent Form 10-K and all subsequent Form 10-Q reports filed by Microsemi with the SEC. Additional risk factors may be identified from time to time in Microsemi's future filings. The forward-looking statements included in this release speak only as of the date hereof, and Microsemi does not undertake any obligation to update these forward-looking statements to reflect subsequent events or circumstances.

SOURCE: Microsemi Corporation

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