Product/Service

Low-Noise Amplifiers For S-Band Applications

Source: RFHIC

RFHIC Introduces GaAs p-HEMT LNA For S-band Applications
These Low Noise Amplifiers are built with GaAs p-HEMT die attached on a ceramic thick film substrate. Alumina, the most commonly used type of ceramic, is what RHIC has chosen due to its relatively high thermal conductivity. These Low Noise Amplifiers are focused on giving the lowest noise possible; exhibiting low noise performance of better than 1dB noise figure. The devices work at input levels as high as 20dBm thanks to the initial gate length of 1200µm design.

Click Here To Download:
Datasheet: CL2701-L/CL2702-L Low-Noise Amplifier
Datasheet: CL3501-L/CL3502-L Low-Noise Amplifier

These Low Noise Amplifiers are built with GaAs p-HEMT die attached on a ceramic thick film substrate. Alumina, the most commonly used type of ceramic, is what RHIC has chosen due to its relatively high thermal conductivity. These Low Noise Amplifiers are focused on giving the lowest noise possible; exhibiting low noise performance of better than 1dB noise figure. The devices work at input levels as high as 20dBm thanks to the initial gate length of 1200µm design.

Click Here To Download:
Datasheet: CL2701-L/CL2702-L Low-Noise Amplifier
Datasheet: CL3501-L/CL3502-L Low-Noise Amplifier