Live From IMS2011: Introducing The XR Family Of 'eXtremely Rugged' LDMOS RF Power Transistors
In this demo, Mark Murphy, director of marketing and business development at NXP Semiconductors, shows the ruggedness of the BLF578XR, NXP's first XR RF power transistor. While most base-station and broadcast applications require "rugged" RF power transistors to survive a VSWR of 10:1 through all phases, the BLF578XR gets through repeated VSWR tests of 125:1. This is very important for ISM applications in which the RF power transistor must survive a VSWR test that can exceed 100:1.
This website uses cookies to ensure you get the best experience on our website. Learn more