IXYS Integrates RF Driver And Power MOSFET In One Device

Santa Clara, CA -- IXYS Corporation announced that its IXYSRF team and wholly-owned subsidiary, Directed Energy, Inc., has developed a new combination RF driver and Power MOSFET in one package. The driver and MOSFET are integrated into an isolated, surface mountable and low inductance RF package. The combination can be operated up to frequencies as high as 40 MHz switching operation for class C, D, and E modes.

"This product demonstrates our high power and high frequency integration capabilities that integrate our driver IC, the "515", with our high frequency power MOSFET, in our isolated DCB based RF power plastic SMD package," said Dr. Nathan Zommer, CEO of IXYS. "It was developed by our expert IXYSRF team in Colorado".

By directly connecting the driver to the MOSFET in a single package, the problems of matching the driver to the MOSFET are eliminated. The IXZ4DF18N50 contains a MOSFET rated at 19 Amperes, 500 Volts coupled with the DEIC515 driver IC for short propagation delays and accurate switching thresholds. The DEIC515 has been designed with very low propagation delays (about half of standard drivers), with fast switching and high drive current. The propagation delay (~17 ns) is reduced by eliminating the level translator in the input circuit. The driver section can be operated from 8 to 24 Volts. Rise and fall times of less than 2 ns have been observed into a 50 Ohm load making the part useful for high power short pulse and switching applications.

The SMD package of the IXZDF18N50 is a high power package, with strong thermal performance, electrical isolation, and thermal power cycling capability. Additional parts with other current and voltage ratings will be added in the future.

SOURCE: Directed Energy, Inc.