Integra Announces New Line of C-Band RF Devices

Integra Debuts Four New Devices for the C-band Radar Market.

Integra Technologies, Inc. (ITI), a leading manufacturer of high power pulsed RF transistors, today announced the development of two Gallium Nitride on Silicon Carbide (GaN/SiC) technology devices targeted for the C-band market. Integra’s world class RF design team have launched three new driver products characterized in the C-band the IGN5259M10, IGN5259M15 and the IGN5259M20 and the high power output product in the C-band IGN5259M120.

“Integra Technologies is excited to announce a host of new GaN/SiC C-band radar devices that will enhance our already extensive portfolio of radar products. GaN technology is ideally suited for high performance at frequencies above where silicon technology is competitive.” says Brian D. Battaglia, Integra’s Sales and Marketing Director “We now offer devices delivering the most pulsed peak output power in both the commercial and military C-band radar frequency bands as we continue to set the pace in high performance RF power devices in the C-band radar market.”

About The IGN5259M10 and IGN5259M15 and MPAG5259M25 

Intended for commercial C-band radar applications including weather radars, the PNs IGN5259M10 and IGN5259M15 and MPAG5259M25 operate over the instantaneous bandwidth covering 5.2 GHz to 5.9 GHz in the C-band frequency range. Under 300μs pulse width and 10% duty cycle pulsing conditions the IGN5259M10 typically supplies a minimum of 10 watts of peak output power while the IGN5259M15 typically supplies a minimum of 15 watts of output power. The MPAG5259M25 is a 50 ohm matched device that produces more than 25W of output power. The small device requires no additional matching circuitry enabling smaller designs, saving board space and money. The devices are housed in a ceramic flanged package providing excellent thermal advantages over plastic packaged devices.

About The IGN5259M120 

Intended for commercial C-band radar applications including weather radars, the PN IGN5259M120 operates over the instantaneous bandwidth covering 5.2 GHz to 5.9 GHz in the C-band frequency range. Characterized under 300μs pulse width and 10% duty cycle pulsing conditions the IGN5259M120 typically supplies a minimum of 120 watts of peak output power and 50 % efficiency. The devices are housed in a ceramic flanged package providing excellent thermal advantages over plastic packaged devices.

Samples and Availability

The IGN5259M10, IGN5259M15, and IGN5259M120 are available for immediate sampling. The MPAG5259M25 will be available for sampling in Q3, 2012. For pricing and delivery please email sales@integratech.com

About Integra Technologies
Integra is the premier supplier of high power pulsed transistors to the aviation industry, with an enviable portfolio covering radar bands in the UHF/VHF, L-band, S-band and C-band for commercial, military and defense markets. Integra services these markets with a variety of semiconductor technologies including VDMOS, LDMOS, bipolar and GaN-on-SiC. Privately owned and operated, Integra employs nearly 100 people at its worldwide headquarters located in El Segundo, CA. Integra’s patented technology starts with an all-gold metallization process for all elements of the die fabrication process to ensure the highest reliability in the industry. With a team of highly knowledgeable RF designers ready to offer application support, we offer both discrete devices and integrated pallets for a commanding presence in the C-band radar marketplace.

More information on Integra can be found at http://www.integratech.com