Integra Announces A Pair Of 100W LDMOS Transistors For The RF Pulse S-Band Radar Market
Integra Technologies, Inc. (ITI), a leading manufacturer of high power pulsed RF transistors, recently announced the development of the world's largest LDMOS pulsed device designed specifically to operate in S-band frequency range. The ILD2731M140 is a high power pulsed RF transistor designed specifically to operate in the 2.7 – 3.1 GHz frequency range for commercial S-band radars. The ILD3135M180 is a high power pulsed RF transistor designed specifically to operate in the 3.1 – 3.5 GHz frequency range for military S-band radars.
"We continue to set the pace in high performance devices in the S-band radar market." says John Titizian, Integra's founder and president "We now offer devices delivering the most pulsed peak output power in both the commercial and military S-band radar frequency bands using LDMOS."
"We have received excellent customer feedback for our existing S-band LDMOS devices and are excited to accommodate the higher pulse widths and duty cycles that are becoming more prevalent in today's marketplace" says Jeff Burger, Vice President of Engineering at Integra.
About the ILD2731M140
Part number ILD2731M140 is designed for S-Band radar applications operating over the 2.7 – 3.1 GHz instantaneous frequency band. Under 300µs pulse width 10% duty cycle pulsing conditions it typically supplies a minimum of 140 watts of peak output power with 12dB gain. Specified operation is with Class AB bias. The LDMOS transistor geometry utilizes a gold metallization system to achieve maximum reliability. The single ended device is housed in an industry standard ceramic flanged package with excellent thermal characteristics.
About the ILD3135M180
Part number ILD3135M180 is designed for S-Band radar applications operating over the 3.1 – 3.5 GHz instantaneous frequency band. Under 300µs pulse width 10% duty cycle pulsing conditions it typically supplies a minimum of 180 watts of peak output power with 11dB gain. Specified operation is with Class AB bias. The LDMOS transistor geometry utilizes a gold metallization system to achieve maximum reliability. The single ended device is housed in an industry standard ceramic flanged package with excellent thermal characteristics.
Samples and Availability
The ILD2731M140 is available for immediate sampling. The ILD3135M180 is available for sampling in Q3.
About Integra Technologies
Integra is the premier supplier of high power pulsed transistors to the aviation industry, with an enviable portfolio covering radar bands in the UHF/VHF, L-band, S-band and C-band for commercial, military and defense markets. Integra services these markets with a variety of semiconductor technologies including VDMOS, LDMOS, bipolar and GaN-on-Si all produced in a domestic all-gold 6" wafer fab. Privately owned and operated with zero debt, Integra employs nearly 100 people at its worldwide headquarters located in El Segundo, CA.
Integra Technologies was founded in 1997 with record setting S-band pulsed performance with patented high frequency bipolar technology. These transistors are still in production today with a long history of in the field reliable performance. Integra's patented technology starts with an all-gold metallization process for all elements of the die fabrication process to ensure the highest reliability in the industry. With a team of highly knowledgeable RF designers ready to offer application support, we offer both discrete devices and integrated pallets for a commanding presence in the S-band radar marketplace.
For more information, visit: http://www.integratech.com.
SOURCE: Integra Technologies, Inc.