Infineon Brings Innovative Radar And Advanced RF Power To IMS 2017

Infineon Technologies AG is bringing its innovative, high-integration millimeter wave transceivers for radar applications, as well as its broad portfolio of RF technologies for radar and cellular infrastructure, to the International Microwave Symposium (IMS 2017) taking place this year from June 6-8 at the Hawaii Convention Center in Honolulu.

Building on decades of experience in RF products, Infineon is expanding the scope of commercial applications for compact, energy-efficient radar. The company offers high integration 24 GHz ISM band radar transceivers for use as intelligent sensors in building and HVAC automation, lighting control, security systems and general industrial environments. In addition, the company’s SiGe-based 60 GHz radar-on-chip ICs are the basis of new gesture control systems for wearable electronics, consumer products and Internet of Things (IoT) applications.

With a position as a top three manufacturer of RF power transistors, Infineon offers LDMOS-based devices across the frequency range (450 MHz – 2700 MHz) and a growing portfolio of high-frequency (1.7 – 3.5 GHz) GaN-on-SiC devices to support next generation cellular networks, RADAR and avionics requirements. Infineon will showcase a new high-efficiency 1.4 KW GaN-on-SiC avionics RF transistor, its new S-Band offering, and an expanding portfolio of Doherty solutions for the 3.5 GHz cellular frequency bands.

Infineon will be demonstrating and showing its range of products in booth #1214 at the exhibition. More information about Infineon’s micro and millimeter wave RF device families is available at www.infineon.com/rf.