Datasheet: IB1011L470 L-Band Avionics Transistor

The high power pulsed avionics transistor part number IB1011L470 is designed for L-Band avionics systems operating at 1030 and 1090 MHz. While operating in class C mode under Mode S-ELM pulse burst conditions at VCC = 48V, this common base device supplies a minimum of 470 watts of peak pulse power. It utilizes a low loss internal input impedance matching structure to yield maximum device gain and to ease the implementation of external matching circuitry. The new generation bipolar transistor geometry utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.