HF12-125 Bipolar Power Transistor
Source: Spectrum Devices
The HF12-125 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF
communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe
operating conditions. The HF12-series products utilize the unique Spectrum Devices' Bipolar process
which offers a 67% improvement in collector-base breakdown voltage, enhancing reliability while
maintaining RF performance.
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Datasheet: HF12-125 Bipolar Power Transistor
Datasheet: HF12-125 Bipolar Power Transistor
Datasheet: HF12-125 Bipolar Power Transistor
DESCRIPTION:
The HF12-125 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF
communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe
operating conditions. The HF12-series products utilize the unique Spectrum Devices' Bipolar process
which offers a 67% improvement in collector-base breakdown voltage, enhancing reliability while
maintaining RF performance.
FEATURES:
- 30 MHz
- 12.5 Volts
- IMD –30 dB
- Common Emitter
- Gold Metallization
- Pout= 125W PEP Min. with 12 dB Gain
- Improved Collector-Base Breakdown Voltage: 60 Volts Min.
- Equivalent to the ST SD1487, with Enhanced Output Power
IMPROVED PARAMETERS:
- BVces/BVcbo: 60 Volt minimum
- BVebo: 20 Volt minimum
- Ices: 5 ma maximum
- Collector Efficiency: 50% minimum
- Power Gain: 12 dB minimum
Datasheet: HF12-125 Bipolar Power Transistor
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