HF12-125 Bipolar Power Transistor

DESCRIPTION:
The HF12-125 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. The HF12-series products utilize the unique Spectrum Devices' Bipolar process which offers a 67% improvement in collector-base breakdown voltage, enhancing reliability while maintaining RF performance.

FEATURES:

• 30 MHz
• 12.5 Volts
• IMD –30 dB
• Common Emitter
• Gold Metallization
• Pout= 125W PEP Min. with 12 dB Gain
• Improved Collector-Base Breakdown Voltage: 60 Volts Min.
• Equivalent to the ST SD1487, with Enhanced Output Power

IMPROVED PARAMETERS:

• BVces/BVcbo: 60 Volt minimum
• BVebo: 20 Volt minimum
• Ices: 5 ma maximum
• Collector Efficiency: 50% minimum
• Power Gain: 12 dB minimum