Product/Service

HF12-125 Bipolar Power Transistor

Source: Spectrum Devices

HF12-125
The HF12-125 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. The HF12-series products utilize the unique Spectrum Devices' Bipolar process which offers a 67% improvement in collector-base breakdown voltage, enhancing reliability while maintaining RF performance.

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Datasheet: HF12-125 Bipolar Power Transistor

DESCRIPTION:
The HF12-125 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. The HF12-series products utilize the unique Spectrum Devices' Bipolar process which offers a 67% improvement in collector-base breakdown voltage, enhancing reliability while maintaining RF performance.

FEATURES:

  • 30 MHz
  • 12.5 Volts
  • IMD –30 dB
  • Common Emitter
  • Gold Metallization
  • Pout= 125W PEP Min. with 12 dB Gain
  • Improved Collector-Base Breakdown Voltage: 60 Volts Min.
  • Equivalent to the ST SD1487, with Enhanced Output Power

IMPROVED PARAMETERS:

  • BVces/BVcbo: 60 Volt minimum
  • BVebo: 20 Volt minimum
  • Ices: 5 ma maximum
  • Collector Efficiency: 50% minimum
  • Power Gain: 12 dB minimum

Click Here To Download:
Datasheet: HF12-125 Bipolar Power Transistor