2.1GHz 5W GaN Doherty Power Amplifier
RFHIC telecommunications amplifier model RTP21005-11 employs GaN (Gallium Nitride) technology to provide 37dBm of average output power from 2110-2170MHz. With incredible 40% efficiency, this amplifier is the key for current LTE wave of Remote Radio Head (RRH) solutions or outdoor small-cell backhaul equipment. The amplifier is 100 x 50 x 20 mm, and utilizes state-of-the-art GaN-SiC transistors. The RTP21005-11, integrated with Doherty configurations, is 100% RF tested and thermal aged for immediate applications to your telecom applications. A 35dB Gain (typ.) model is also available. Send your request to rfsales@rfhic.com for RTP21005-11 model information, pricing and availability.
Electrical Specifications @ VDD=28V, 50Ω System
|
Parameter |
Unit |
Min |
Typ |
Max |
|
|
Frequency Range |
MHz |
2110 |
|
2170 |
|
|
Operating Bandwidth |
MHz |
|
60 |
|
|
|
Average Output Power |
dBm |
|
37 |
|
|
|
Spectrum Emission Mask |
- |
PER 3GPP TS-25.141 & TS25.141 |
|||
|
ACLR (WCDMA 4FA) |
Pre-DPD |
dBc |
|
-25 @ ±5MHz |
|
|
Post-DPD |
|
-45 @ ±5MHz |
|
||
|
ACLR (LTE 10MHz 1FA) |
Pre-DPD |
dBc |
|
-28 @ ±10MHz |
|
|
Post-DPD |
|
-52 @ ±10MHz |
|
||
|
Harmonics (2nd, with DPD) |
dBc |
-45 (Max.) |
|||
|
RF Gain @ 25°C |
dB |
|
47 |
|
|
|
Gain Variation |
dB |
±3dB @ frequency range, 5W Pavg, -30 ~ +60°C |
|||
|
Gain Flatness |
dB |
|
±2 |
|
|
|
Input Return Loss |
dB |
|
|
-16 |
|
|
Output Return Loss |
dB |
|
|
-18 |
|
|
Operating Voltage |
V |
VDC1 : 5.6, VDC2 : 28 |
|||
|
Current Consumption |
A |
0.12 @ 5.6V, 0.42 @ 28V |
|||
|
Efficiency |
% |
|
40 |
|
|
|
Feedback Output Level @ 40dBm |
dBm |
|
2 |
|
|
|
Operating Temperature |
°C |
-30 |
|
60 |
|
Product Features
- GaN-SiC + Doherty Technology
- Solid-state Linear Design
- Small and Light Weight
- Suitable for WCDMA/LTE
- 50Ω In/Output Impedance
- Long-term Reliability and Ruggedness
- Built in Output Isolator
- Good Power Efficiency
About RFHIC
Founded at the beginning of the current wave of RF technology, RFHIC is a global leader in the design and manufacture of RF & Microwave components across the fields of telecommunications, defense industries, consumer goods, and customized solutions. With years of experience with high powered components and hybrid solutions using GaN (Gallium Nitride); RFHIC continues to innovate and transform the industry. RFHIC’s comprehensive product portfolio, from discrete to integrated high power amplifiers, utilizes the most sophisticated technologies available in the industry, at the lowest cost in the world. For more information, visit www.rfhic.com
About RFHIC US Corporation
RFHIC US Corporation was founded to address the need for cost effective, high performing and efficient power amplifiers, especially in the US military market. Headquartered in Cary, North Carolina, RFHIC US Corporation has sales reps supporting various regions of the US. RFHIC US Corporation strives to become a world-class RF component maker, utilizing the most sophisticated technologies including hybrid solutions of GaN (Gallium Nitride), and to become a cost effective solution provider to our customers. For more information, visit www.rfhicusa.com.
Source: RFHIC Corporation