Datasheet | September 4, 2019

75 W, 2.7 - 3.5 GHz GaN MMIC Power Amplifier: CMPA2735075F Datasheet

Source: Wolfspeed, A Cree Company

The CMPA2735075F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) suited for civil and military pulsed radar applications. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. For additional features and specifications on the CMPA2735075F power amplifier, download the datasheet.

access the Datasheet!

Get unlimited access to:

Trend and Thought Leadership Articles
Case Studies & White Papers
Extensive Product Database
Members-Only Premium Content
Welcome Back! Please Log In to Continue. X

Enter your credentials below to log in. Not yet a member of RF Globalnet? Subscribe today.

Subscribe to RF Globalnet X

Please enter your email address and create a password to access the full content, Or log in to your account to continue.

or

Subscribe to RF Globalnet