Datasheet | December 10, 2015

25W, 32V, DC-12 GHz GaN RF Transistor: TGF2979-SM Datasheet

Source: Qorvo
25W, 32V, DC-12 GHz GaN RF Transistor: TGF2979-SM

The TGF2979-SM is a 25W discrete GaN on SiC HEMT with an operating frequency in the DC-12 GHz range, and an operating voltage of 25V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics. Download the datasheet for more specifications.