Datasheet | December 10, 2015

5W, 32V, DC-12 GHz GaN RF Transistor: TGF2977-SM Datasheet

Source: Qorvo
5W, 32V, DC-12 GHz GaN RF Transistor: TGF2977-SM Datasheet

The TGF2977-SM is a 5W discrete GaN on SiC HEMT with an operating frequency in the DC-12 GHz range, and an operating voltage of 32V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics. Download the datasheet for more specifications.

VIEW THE DATASHEET!
Signing up provides unlimited access to:
Signing up provides unlimited access to:
  • Trend and Leadership Articles
  • Case Studies
  • Extensive Product Database
  • Premium Content
HELLO. PLEASE LOG IN. X

Not yet a member of RF Globalnet? Register today.

ACCOUNT SIGN UP X
Please fill in your account details
Login Information
ACCOUNT SIGN UP

Subscriptions

Sign up for the newsletter that brings you the industry's latest news, technologies, trends and products.

You might also want to: