Datasheet | December 10, 2015

5W, 32V, DC-12 GHz GaN RF Transistor: TGF2977-SM Datasheet

Source: Qorvo
5W, 32V, DC-12 GHz GaN RF Transistor: TGF2977-SM Datasheet

The TGF2977-SM is a 5W discrete GaN on SiC HEMT with an operating frequency in the DC-12 GHz range, and an operating voltage of 32V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics. Download the datasheet for more specifications.