GaN Gives Power and Flexibility to L-Band Radar

Radar sales are on the rise, increasing the production of air traffic control radar systems,  and resulting in the intensified research and development on improving the performance of the L-band, which requires high pulsed power. High-power RF transistors need to be employed and GaN offers the solution. GaN is the leading semiconductor technology used in the construction of RF power transistors, enabling breakthroughs in power output capacity, temperature tolerance and efficiency. Download the full paper to learn how GaN transistors offer more power and flexibility to L-band radars.

Reprinted with permission of Compound Semiconductor from the January/February 2015 issue.