Freescale Announces RFICs Optimized For TD-SCDMA Applications

Barcelona, Spain -- 3GSM World Congress -- Freescale Semiconductor introduced a high power multi-stage RF power LDMOS FET characterized for Time Division-Synchronous Code Division Multiple Access (TD-SCDMA) wireless base stations.

The TD-SCDMA standard is a third-generation wireless access method that is expected to be widely deployed in the People's Republic of China. Freescale claims it is the first company to deliver commercial RF Integrated Circuits (RFICs) characterized for the emerging standard. The high output levels of the newly optimized Freescale MW6IC2240NB allow OEMs to reduce their part count from two or three devices to one, saving board space and reducing power consumption and cost.

The flagship MW6IC2240NB is an LDMOS two-stage RFIC. When employed in a final amplifier application at 28 V, it is designed to deliver a gain of 28 dB, ALT1 of -47 dBc and ALT2 of -49 dBc (6-carrier TD-SCDMA signal) from 2010 MHz to 2025 MHz at an output power of 35 dBm. The MW6IC2240NB operates from 26 to 32 V and features integrated quiescent current temperature compensation. It is housed in a TO-272 over-molded, cost-effective plastic package.

"All wireless markets, including the emerging TD-SCDMA applications, demand the most cost-effective solutions at all levels of technology from components through subsystems," said Gavin P. Woods, vice president and general manager, RF Division, Freescale Semiconductor. "By combining multiple gain stages in a single RFIC package, we designed the MW6IC2240NB to significantly reduce an OEM's design complexity, part count, system size and bill of materials."

In addition to the MW6IC2240NB, Freescale introduced six additional LDMOS and MOSFET power amplifiers well suited for multi-carrier applications such as CDMA, W-CDMA and TD-SCDMA. Operating at a frequency range of 2010 to 2170 MHz, the devices are:

• MHV5IC2215N: A two-stage LDMOS driver amplifier with output power of 23 dBm, gain of 27.5 dB, ALT1 of -49 dBc and ALT2 of -50 dBc (6-carrier TD-SCDMA signal).
• MRF6S21060N: An N-channel, enhancement-mode lateral power MOSFET with output power of 35 dBm, gain of 15.5 dB, ALT1 of -48 dBc and ALT2 of -49 dBc (6 carrier TD-SCDMA signal).
• MRF6S21100N: An N-channel, enhancement-mode lateral power MOSFET with output power of 35 dBm, gain of 14.5 dB, ALT1 of -49 dBc and ALT2 of -51 dBc (6 carrier TD-SCDMA signal).
• MRF6S21100H: An N-channel enhancement-mode lateral power MOSFET with output power of 35 dBm, gain of 16 dB, ALT1 of -51 dBc and ALT2 of -53 dBc (6 carrier TD-SCDMA signal).
• MW6IC2015NB: A two-stage LDMOS driver amplifier with output power of 25 dBm, gain of 27 dB, ALT1 of -50 dBc and ALT2 of -52 dBc (6 carrier TD-SCDMA signal).
• MRF7S19080H: An N-channel enhancement-mode lateral power MOSFET with output power of 35 dBm, gain of 18 db, ALT1 of -51 dBc and ALT2 of -52 dBc (6 carrier TD-SCDMA signal).

All of the devices are RoHS compliant, have internally-matched inputs and outputs, and are available on tape and reel. They operate from bias voltages of 26 to 32 V. All except the MRF6S21100H and the MRF7S19080H are housed in Freescale's over-molded plastic packages with a temperature rating of 200oC.

The MW6IC2240NB, MRF7S19080H, MHV5IC2215N, MRF6S21060N, MRF6S21100N, MRF6S21100H and MW6IC2015NB are in full production and available now.

SOURCE: Freescale Semiconductor, Inc.