Ericsson and STMicroelectronics to Cooperate on Development of Bluetooth ICs
The first device will be implemented in ST's advanced 0.18-µCMOS technology and will combine radio frequency functions with logic and digital processing required for establishing and controlling communication links between Bluetooth-enabled devices. Specifically developed and thoroughly characterized in the RF domain, ST's RFCMOS8 technology permits the integration of complex digital circuits with RF transceivers operating in the typical ISM gigahertz frequency range.
This agreement demonstrates STMicroelectronics' commitment to Ericsson's Bluetooth baseband architecture for the development of leading-edge solutions, based on the Ericsson Bluetooth core and ST's next generation RFCMOS technology. ST's advanced process technology, including RFCMOS for a single chip and BICMOS for RF front-end, coupled with the company's design capability and support, will allow for the creation of highly integrated Bluetooth ICs.