Dual-Gate GaAs FET Chip
The CF007-01 is a 300 micron gate width dual-gate GaAs FET with sub 0.5 micron recessed gates.
Click here to download the datasheet in pdf format.
The CF007-01 is a 300 micron gate width dual-gate GaAs FET with sub 0.5 micron recessed gates. It has high |S21|2 and moderate output power which makes it suitable for gain and driver stages for wideband amplifiers in the 2 to 20 GHz frequency range. It is also useful for AGC and mixer applications. The accessibility of the intermediate electrode is useful in some aplications. Silicon nitride passivation provides surface stabilization.
Features
- Implanted Active Layer for Uniformity
- High Insertion Gain Useful to 20 GHz
- +16 dBm p1dB at 12 GHz
- Ti/Pt/Au Recessed Gates
- Silicon Nitride Passivation
- All Gold Metal System
Click here to download the datasheet in pdf format.