Datasheet: Dual-Gate GaAs FET Chip
The CF007-01 is a 300 micron gate width dual-gate GaAs FET with sub 0.5 micron recessed gates. It has high |S21|2 and moderate output power which makes it suitable for gain and driver stages for wideband amplifiers in the 2 to 20 GHz frequency range. It is also useful for AGC and mixer applications. The accessibility of the intermediate electrode is useful in some aplications. Silicon nitride passivation provides surface stabilization.
access the Datasheet!
Log In
Get unlimited access to:
Trend and Thought Leadership Articles
Case Studies & White Papers
Extensive Product Database
Members-Only Premium Content
Welcome Back! Please Log In to Continue.
X
Enter your credentials below to log in. Not yet a member of RF Globalnet? Subscribe today.
Subscribe to RF Globalnet
X
Subscribe to RF Globalnet