Datasheet | October 27, 2015

7 W Discrete Power Transistor: TGF2952 Datasheet

Source: Qorvo

The TGF2952 is a 7W discrete GaN on SiC HEMT with an operating frequency in the DC – 14 GHz range, has a saturated output power of 38.4 dBm, and power gain of 20.4 dB at 3 GHz. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of high efficiency applications including military and civilian radar, radio communications, and test instrumentation. Download the datasheet for more specifications.

VIEW THE DATASHEET!

Get unlimited access to:

Trend and Thought Leadership Articles
Case Studies & White Papers
Extensive Product Database
Members-Only Premium Content
Welcome Back! Please Log In to Continue. X

Enter your credentials below to log in. Not yet a member of RF Globalnet? Subscribe today.

Subscribe to RF Globalnet X

Please enter your email address and create a password to access the full content, Or log in to your account to continue.

or

Subscribe to RF Globalnet