12W Discrete Power Transistor: TGF2023-2-02 Datasheet
Source: Qorvo
The TGF2023-2-02 is a 12W discrete GaN on SiC HEMT with an operating frequency in the DC – 18 GHz range, and an operating voltage of Dec-32V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation. Download the datasheet for more specifications.
VIEW THE DATASHEET!
Log In
Signing up provides unlimited access to:
Free Sign Up

Signing up provides unlimited access to:
- Trend and Leadership Articles
- Case Studies
- Extensive Product Database
- Premium Content
HELLO. PLEASE LOG IN.
X
Not yet a member of RF Globalnet? Register today.
ACCOUNT SIGN UP
X
Please fill in your account details
ACCOUNT SIGN UP
This website uses cookies to ensure you get the best experience on our website. Learn more