White Paper

Designing A Broadband L-band 160 W GaN Power Amplifier Using SMT Packaged Transistors

Source: Qorvo
Designing A Broadband L-band 160 W GaN Power Amplifier Using SMT Packaged Transistors

By J. M. Greene, R. M. H. Smith, L. M. Devlin, R. Santhakumar, R. Martin of Plextek RFI, Cambridge, UK and Qorvo Inc., Richardson, TX, USA

Advancements in Gallium Nitride technologies are leading to amplifier operation at higher powers, supply voltages, and frequencies. Qorvo details the design of a broadband power amplifier using state-of-the-art transistors in SMT plastic packages. The whitepaper includes load-pull measurements, thermal considerations, and EM simulations of the input/output matching networks. Download the full paper for more information on the design process.