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DC – 2700 MHz GaN HEMT For LTE And Pulse Radar Applications

Source: Wolfspeed, A Cree Company

DC – 2700 MHz GaN HEMT For LTE And Pulse Radar Applications

The new CGHV27060MP from Wolfspeed, a Cree Company, is a 60 W, 50 V gallium nitride (GaN) high electron mobility transistor operating in the DC to 2700 MHz frequency range.  This broadband device features no internal input or output match, making the transistor an excellent solution for pulsed radar applications at UHF, as well as for LTE micro base station amplifiers with 10 – 15 W average power and high efficiency topologies.

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The CGHV27060MP transistor is capable of providing up to 80 W of pulsed power with 16.5 dB of gain and 70 percent efficiency. When used for WCDMA applications, the transistor provides 41.5 dBm of power with 180.25 dB gain and 33 percent efficiency. It is housed in a small plastic SMT package that measures 4.4mm x 6.5mm.

For more features, specifications, and performance characteristics, download the available datasheet.

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