Datasheet: CL3501-L/CL3502-L Low-Noise Amplifier
Source: RFHIC
These Low Noise Amplifiers are built with GaAs p-HEMT die attached on a ceramic thick film substrate. Alumina, the most commonly used type of ceramic, is what RHIC has chosen due to its relatively high thermal conductivity. These Low Noise Amplifiers are focused on giving the lowest noise possible; exhibiting low noise performance of better than 1dB noise figure. The devices work at input levels as high as 20dBm thanks to the initial gate length of 1200µm design.
access the Datasheet!
Log In
Get unlimited access to:
Trend and Thought Leadership Articles
Case Studies & White Papers
Extensive Product Database
Members-Only Premium Content
Welcome Back! Please Log In to Continue.
X
Enter your credentials below to log in. Not yet a member of RF Globalnet? Subscribe today.
Subscribe to RF Globalnet
X
Subscribe to RF Globalnet
This website uses cookies to ensure you get the best experience on our website. Learn more