Datasheet | January 31, 2011

Datasheet: BLA6H1011-600, RF Power Transistor

Source: NXP Semiconductors

Running from a 50V supply voltage, the BLA6H1011-600 is a LDMOS power transistor which delivers 600W output power for pulsed RF signals, 52% efficiency and 17dB gain across the band. The transistor is intended for avionics transmitter applications in the 1030 MHz to 1090 MHz range such as TCAS (travel collision avoidance system) and IFF (identification friend/foe). This final stage transistor should be accompanied by NXP's BLL6H0514-25 driver in a power amplifier line-up.

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