Application Note

Bias and RF Sequencing For GaN And LDMOS RF Power Devices

Source: Wolfspeed, A Cree Company
Wolfspeed - Bias and RF Sequencing For GaN And LDMOS RF Power Devices

Wolfspeed supplies LDMOS (Laterally-Diffused Metal-Oxide Semiconductor) and GaN (Gallium Nitride) RF Power Amplifier solutions for a variety of applications ranging from aerospace and defense to cellular infrastructure.

GaN HEMT (High-Electron-Mobility Transistor) and LDMOS MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) are voltage controlled field-effect transistors requiring specific bias sequencing to ensure safe operation under the conditions specified within a datasheet. Download the application note for more information.

access the Application Note!

Get unlimited access to:

Trend and Thought Leadership Articles
Case Studies & White Papers
Extensive Product Database
Members-Only Premium Content
Welcome Back! Please Log In to Continue. X

Enter your credentials below to log in. Not yet a member of RF Globalnet? Subscribe today.

Subscribe to RF Globalnet X

Please enter your email address and create a password to access the full content, Or log in to your account to continue.


Subscribe to RF Globalnet