Asymmetric Doherty Amplifier: QPD0012

Source: Qorvo

The QPD0012 is a dual-path discrete GaN on SiC HEMT in DFN package which operates from 2.5 to 2.7 GHz. The device is a single-stage power amplifier transistor for Doherty application.

Applications include 5G Massive MIMO, WCDMA/LTE, Microcell Base Station, Small Cell, Active Antenna, and Asymmetric Doherty Applications. 

Product Features Include:

  • 2500 – 2700 MHz
  • Operating Drain Voltage: +48V
  • Peak Doherty Output Power: 47.3dBm
  • Doherty Drain Efficiency at 38.8dBm: 59%
  • Doherty Gain at 38.8 dBm: 14.8dB
  • 7.0 x 6.5mm DFN package

This product is currently in production. 

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