Ampleon Leads RF Power Efficiency With Launch Of 62% Efficient Gen9HV LDMOS Transistor For Particle Accelerators

Ampleon recently announced the BLF13H9L750P, a 750 Watt Gen9HV LDMOS RF power transistor designed specifically for use in particle accelerator applications operating in the 1.3 GHz spectrum. Constructed in a ceramic 4-lead SOT539 format and available both in a flanged bolt down package (BLF13H9L750P) and a flanged earless package (BLF13H9LS750P), the transistor delivers what is believed to be the highest efficiency available in its class of better than 62%. With such a high operating efficiency specification, the transistor helps to deliver significant power savings compared to other solid state competitor devices. In addition, when compared to older klystron and valve-based equipment, a solid state approach requires considerably less maintenance, has a longer life cycle and requires less physical space, further contributing to lower operating costs.

The BLF13H9L(S)750P transistors also feature a market-leading gain of 17 dB. The Ampleon Gen9HV 50V LDMOS process was introduced during 2017 and yields transistors of high consistency ensuring customers can maintain high levels of reproducibility during production.

About Ampleon:
Created in 2015, Ampleon is shaped by 50 years of RF power leadership and is set to exploit the full potential of data and energy transfer in RF. Ampleon has more than 1,350 employees worldwide, dedicated to creating optimal value for customers. Its innovative, yet consistent portfolio offers products and solutions for a wide range of applications, such as mobile broadband infrastructure, radio & TV broadcasting, CO2 lasers & plasma, MRI, particle accelerators, radar & air-traffic control, non-cellular communications, RF cooking & defrosting, RF heating and plasma lighting. For more information, visit www.ampleon.com.