News | February 22, 2022

Ampleon Boosts GaN-on-SiC HEMT Transistor Performance With The Release Of Generation 3

Ampleon today announced the release of two new broadband GaN-on-SiC HEMT transistors in the power classes of 30 Watts CLF3H0060(S)-30, 100 Watts CLF3H0035(S)-100. These high linearity devices are the initial products from our Generation 3 GaN-SiC HEMT process recently qualified and released to production.

The devices offer broadband high linearity features under low bias settings to raise the performance levels for broadband linearity (under -32dBc third-order intermodulation products at 5dB, and less than -42dBc at 8dB back-off from saturated power over a 2:1 bandwidth). Broadband linearity is vital for frequency-agile radios deployed in today’s defense electronics for handling multi-mode communication waveforms (from FM through high-order QAM signals) with simultaneous application of countermeasure channels. These demanding applications require transistors with inherently better broadband linearity. Based on market feedback, the Ampleon Generation 3 GaN-on-SiC HEMT transistors meet these extended broadband linearity requirements.

In addition, the Generation 3 transistors are housed in a thermally enhanced package, which enables reliable operation and offers an extremely rugged VSWR withstand capability of up to 15:1 for a 30 Watt device. The ruggedness extends to Class A operation, common to instrumentation applications with saturated gate conditions while maintaining linearity over a wide dynamic range at extended frequency ranges. Ampleon’s Generation- 3 GaN-on-SiC HEMT transistors set a new standard for high linearity GaN technology for broadband applications while maintaining excellent thermal and ruggedness features.

Further information on Ampleon’s latest 50V Generation 3, GaN-on-SiC RF power transistors can be found here: CLF3H0060(S)-30, CLF3H0035(S)-100.

These transistors are available directly from Ampleon, or authorized distributors RFMW and Digi-Key. Large-signal models in ADS and MWO are available from Ampleon’s website.

About Ampleon
Created in 2015, Ampleon is shaped by more than 50 years of RF Power leadership. The company envisions to make the world a better place through innovation in high-frequency applications based on advanced LDMOS and GaN technologies. Ampleon has more than 1,600 employees worldwide, dedicated to enabling their customers to be successful with RF Power products through close cooperation and partnership, innovation, and excellent execution. Its innovative, yet consistent portfolio offers products and solutions for 4G LTE and 5G NR infrastructure, industrial, scientific, medical, broadcast, aerospace, and defense applications. For more information, visit www.ampleon.com.

Source: Ampleon