AMCOM Introduces 25 To 2500 MHz MMIC Power Amplifier

Clarksburg, MD -- AMCOM Communications, a designer and manufacturer of gallium arsenide (GaAs) field effect transistor (FET) power semiconductor devices and monolithic microwave integrated circuits (MMICs), has introduced a new GaAs metal semiconductor FET (MESFET) MMIC power amplifier (PA), the model AM012535MM-BM. At 20 V drain bias voltage, the PA achieves an instantaneous bandwidth from 25 to 2,500 MHz, with gain of 22 dB +/1 dB, output power of 35 dBm +/-1 dBm, and efficiency over 25% across the band.

This MMIC PA uses a patented high voltage FET (HiFET) technology, which connects the active devices both DC and RF in series, so that both DC bias voltage and RF impedance are multiples of the number of devices in series. Since the power device RF impedance is usually much lower than 50 Ohms, the HiFET device has an RF impedance close to 50 Ohms, which leads to broadband amplification.

This amplifier has applications as a driver for the Joint Tactical Radio System (JTRS), as a broadband jammer, and in instrumentation. The MMIC chip has silicon nitride (SiN) surface passivation and is topped with polyimide protection. It is packaged in a small ceramic package, which is compatible to surface mount technology for low-cost volume production.

Engineering samples are available today from stock, and production quantities are available in 8 to 10 weeks ARO.

Source: AMCOM Communications