Product/Service

ALH503: 80 - 100 GHz Low Noise Amplifier

Source: Northrop Grumman Microelectronic Products & Services

ALH503: 80 - 100 GHz Low Noise Amplifier

The ALH503 is a broadband, three-stage, low noise monolithic HEMT amplifier designed for use in Millimeter-Wave Imaging, commercial digital microwave radios and wireless LANs

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Datasheet: ALH503 80 – 100 GHz Low Noise Amplifier

The ALH503 is a broadband, three-stage, low noise monolithic HEMT amplifier designed for use in Millimeter-Wave Imaging, commercial digital microwave radios and wireless LANs. The small die size allows for extremely compact packaging. To ensure rugged and reliable operation, HEMT devices are fully passivated. Both bond pad and backside metallization are Ti/Au, which is compatible with conventional die attach, thermocompression and thermosonic wire bonding assembly techniques.

Amplifier Features

  • RF Frequency: 80 to 100 GHz
    Effective Bandwidth:
  • Linear Gain:
    • 16 dB (average from 80 to 100 GHz)
  • Noise Figure:
    • 4.5 dB typ. LNA Option (-LN)
    • 5 dB typGain Block: Option (–GB)
  • Die Size: < 2.9 sq. mm.
  • DC Power: 2 VDC @ 25 mA

Additional information on the LNA and Gain Block options can be found on the available datasheet.

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Datasheet: ALH503 80 – 100 GHz Low Noise Amplifier