Product/Service

ALH497 80 - 100 GHz Low Noise Amplifier

Source: Northrop Grumman Microelectronic Products & Services

ALH497 80 - 100 GHz Low Noise Amplifier

The ALH497 is a broadband, three-stage, low noise monolithic HEMT amplifier designed for use in Millimeter-Wave Imaging, commercial digital microwave radios and wireless LANs

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Datasheet: ALH497 80 – 100 GHz Low Noise Amplifier

The ALH497 is a broadband, three-stage, low noise monolithic HEMT amplifier designed for use in Millimeter-Wave Imaging, commercial digital microwave radios and wireless LANs. The small die size allows for extremely compact packaging. To ensure rugged and reliable operation, HEMT devices are fully passivated. Both bond pad and backside metallization are Ti/Au, which is compatible with conventional die attach, thermocompression and thermosonic wire bonding assembly techniques.

Features

  • RF Frequency: 80 to 100 GHz
  • Linear Gain:
    • 17 dB typ. (80 to 100 GHz)
    • 19 dB typ. (92 to 96 GHz)
  • Noise Figure:
    • LNA Option (-LN)
      • 4.2 dB typ. 92-96 GHz
      • 4.5 dB typ. 81-86 GHz
    • Gain Block: Option (–GB)
      • 5 dB typ. 92-96 GHz
  • Single Vg & Vdports for simplified bias and assembly
  • Narrow Y dimension (1.1mm)
  • Die Size: < 3.2 sq. mm.
  • DC Power: 2 VDC @ 25 mA

Additional information on the LNA and Gain Block options can be found on the available datasheet.

Click Here To Download:
Datasheet: ALH497 80 – 100 GHz Low Noise Amplifier