Advanced Power Technology RF Announces P-Band Transistor Line

Santa Clara, CA -- Advanced Power Technology RF's Military & Aerospace Division (APT-RF) announced a new product family of high power transistors targeting P-Band Pulsed Radar Applications. These new products utilize newer chip designs and processing enhancements to offer state-of-the-art performance, notably in high power and high gain over the frequency range and the lowest droop over 150 us pulse width.

The P-Band series transistors consists of three model types: 0910-60M, 0910-150M, and 0910-300M which cover the frequency for P-Band Radar Applications from 890 to 1000 MHz with a pulsed output power of 60W, 150W, and 300W respectively. These transistors are designed to handle medium pulse widths of 150us with a duty cycle of 5% minimum. The high performance class C 300W device, for example, offers 9.6 dB of power gain, 50% collector efficiency and extremely low droop, 0.5 dB or less, across the 150 us pulse width. This state-of-the-art performance is achieved with the latest APT RF's Si BJT high power technology.

By integrating 4, 6, or 8 of the 0910-300M transistors with a 0910-150M and 0910-60 as the driver and pre-driver stage, customers can comfortably achieve kilowatts output power for P-Band Radar application.

"We are extremely pleased to offer these top-notched P-band products, in addition to the existing APT RF L-Band Radar Product Family. These latest P-Band products extend the frequency coverage available to our valued Radar customers." said Jerry Chang, Director of Radar and RF Module Business. "Radar customers turn to APT-RF for our strong custom design and development capability, excellent technical and product support, and ability to deliver high volume transistors that provides the best repeatability and consistency in the industry."

SOURCE: Microsemi Power Products Group, Formerly Advanced Power Technology RF