A Review Of GaN On SiC High Electron-Mobility Power Transistors And MMICs

Gallium–nitride power transistor (GaN HEMT) and integrated circuit technologies have matured dramatically over the last few years, and many devices have been manufactured and fielded in applications ranging from pulsed radars and counter-IED jammers to CATV modules and fourth-generation infrastructure base-stations. GaN HEMT devices, exhibiting high power densities coupled with high breakdown voltages, have opened the possibilities for highly efficient power amplifiers (PAs) exploiting the principles of waveform engineered designs. This paper summarizes the unique advantages of GaN HEMTs compared to other power transistor technologies, with examples of where such features have been exploited. Download the full paper for more information.