Product/Service

800-1000 MHz 12W P-Band Radar Transistor

Source: Integra Technologies, Inc.

800-1000 MHz 12W P-Band Radar Transistor
The IB0810M12 is a 12 watt, common base silicon bipolar transistor intended to operate in class C mode over the instantaneous operating frequency band of 870-990 MHz
The IB0810M12 is a 12 watt, common base silicon bipolar transistor intended to operate in class C mode over the instantaneous operating frequency band of 870-990 MHz. It is intended for us a a driver transistor for the IB0810M50. The bipolar transistor geometry utilizes a gold metalization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability.
  • Output Power > 12 W
  • Gain = 7.8 dB
  • Efficiency = 54 %
  • Vcc = 36 V
  • Pulse Width = 300 us
  • Duty Factor = 15 %