800-1000 MHz 12W P-Band Radar Transistor
Source: Integra Technologies, Inc.
The IB0810M12 is a 12 watt, common base silicon bipolar transistor intended to operate in class C mode over the instantaneous operating frequency band of 870-990 MHz
The IB0810M12 is a 12 watt, common base silicon bipolar transistor intended to operate in class C mode over the instantaneous operating frequency band of 870-990 MHz. It is intended for us a a driver transistor for the IB0810M50. The bipolar transistor geometry utilizes a gold metalization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability.
- Output Power > 12 W
- Gain = 7.8 dB
- Efficiency = 54 %
- Vcc = 36 V
- Pulse Width = 300 us
- Duty Factor = 15 %
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