Datasheet | March 15, 2024

750 V, 58 mohm SiC FET: UJ4C075060L8S Datasheet

Source: Qorvo

The UJ4C075060L8S is a 750V, 58 mohm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs.

Available in the space-saving MO-229 package which enables automated assembly, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

access the Datasheet!

Get unlimited access to:

Trend and Thought Leadership Articles
Case Studies & White Papers
Extensive Product Database
Members-Only Premium Content
Welcome Back! Please Log In to Continue. X

Enter your credentials below to log in. Not yet a member of RF Globalnet? Subscribe today.

Subscribe to RF Globalnet X

Please enter your email address and create a password to access the full content, Or log in to your account to continue.

or

Subscribe to RF Globalnet