Product/Service

2.7-2.9 GHz 170W S-Band Radar Transistor

Source: Integra Technologies, Inc.
The high power pulsed radar transistor part number IB2729M170 is designed for S-Band ATC radar systems operating over the instantaneous bandwidth of 2.7-2.9 GHz. While operating in class C mode this common base device supplies a minimum of 170 watts of peak pulse power under the conditions of 100µs pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters, including power gain compression...

The high power pulsed radar transistor part number IB2729M170 is designed for S-Band ATC radar systems operating over the instantaneous bandwidth of 2.7-2.9 GHz. While operating in class C mode this common base device supplies a minimum of 170 watts of peak pulse power under the conditions of 100µs pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters, including power gain compression. Excellent spectral stability into output mismatch over a broad input power range make it ideal for use in reliable high power solid state transmitters. The test fixture includes a passive amplitude sloping network to insure that the device is not overdriven as the operating frequency decreases. Located on the input impedance matching structure, this network allows an input drive characteristic that is flat with frequency.

Features

Silicon Bipolar

  • Ultra-high fT
Class C Operation
  • High Efficiency
Common Base Configuration
  • Single Power Supply
Gold Metal
  • Maximum Reliability
Emitter Ballasting
  • Optimum Thermal Distribution
Internal Impedance Matching
  • Ease of Use
  • Ultra-low Loss Design
Be0 Package
  • Unmatched Thermal Reliability
RF Test Fixture
  • Broadband
  • Matched to 50ohms
  • Long-term Correlation
  • 100% Device RF Screening
  • No External Tuning Allowed

Downloads:
•Datasheet: IB2729M170 S-Band Radar Transistor