2000 MTT-S: Toshiba Introduces Internally Matched C-Band Power GaAs FETs

Toshiba America Electronic Components/Taecs of internally matched C-Band Gallium Arsenide (GaAs) FETs spans the 4 W to 25 W power range. The new "UL (Ultra Linear)" series offers improved linearity and higher gain over Toshiba's existing line-up of internally matched C-Band GaAs FETs, allowing customers to achieve better system performance at lower price points to meet market demand.

This series' devices provide 1dB higher gain and 2dB higher linearity over the company's existing line-up of internally matched C-Band GaAs FETs. These advancements reduce the number of FET stages required for completed power amplifiers, while improving the bit error rate (BER) for whole communication systems. The high efficiency of the UL series devices reduces the power supply capacity and simplifies the thermal design, enabling design engineers to use fewer components for lower total system costs.

The UL series is based on refinements to Toshiba's GaAs MESFET process technologies, along with a new device structure utilizing a PHS (Plated Heat Sink) at the source contact. Toshiba's ion implantation technologies, which provide abrupt carrier concentration profile and high carrier density, and VIA-HOLE structure, which reduces source inductance, contribute to the enhanced gain and linearity performance.

Toshiba has expanded its current line-up of 4W, 8W and 16W devices by adding 6W, 12W and 25W C-Band Power GaAs FETs to the UL series for the 5.9 to 6.4 gigahertz (GHz) range. In addition, the UL series features industry-compatible packaging, enabling scalable designs with a variety of output power.

Engineering samples of the UL series devices will be available next month, with volume production scheduled to begin in October 2000.

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