The µPC2745TB and µPC2746TB are silicon monolithic integrated circuits designed as buffer amplifier for mobile
communications. These low current amplifiers operate on 3.0 V (1.8 V MIN.).
These ICs are manufactured using our 20 GHz fT NESATIII silicon bipolar process. This process uses silicon
nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and
prevent corrosion/migration. Thus, these IC have excellent performance, uniformity and reliability.
Supply voltage : Recommended VCC = 2.7 to 3.3 V
Circuit operation VCC = 1.8 to 3.3 V
Upper limit operating frequency : µPC2745TB; fu = 2.7 GHz TYP.@3 dB bandwidth
µPC2746TB; fu = 1.5 GHz TYP.@3 dB bandwidth
High isolation : µPC2745TB; ISL = 38 dB TYP.@f = 500 MHz
µPC2746TB; ISL = 45 dB TYP.@f = 500 MHz
Power gain : µPC2745TB; GP = 12 dB TYP.@f = 500 MHz
µPC2746TB; GP = 19 dB TYP.@f = 500 MHz