1200 V, 23 mohm SiC FET: UF4SC120023B7S
Source: Qorvo
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.
The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the D2PAK-7L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.
Key Features
- On Resistance RDS(on): 23 mohm (typ)
- Operating temperature: 175C (max)
- Excellent reverse recovery: Qrr = 243nC
- Low body diode VFSD: 1.2V
- Low gate charge: QG = 37.8nC
- Low intrinsic capacitance
- ESD Protected: HBM Class 2
This website uses cookies to ensure you get the best experience on our website. Learn more