Product/Service

1030 MHz 470W Mode S-ELM Avionics Transistor

Source: Integra Technologies, Inc.
The high power pulsed avionics transistor part number IB1011L470 is designed for L-Band avionics systems operating at 1030 and 1090 MHz. While operating in class C mode under Mode S-ELM pulse burst conditions at VCC = 48V, this common base device supplies a minimum of 470 watts of peak pulse power. It utilizes a low loss internal input impedance matching structure to yield maximum device gain and to ease the implementation of external matching circuitry...

The high power pulsed avionics transistor part number IB1011L470 is designed for L-Band avionics systems operating at 1030 and 1090 MHz. While operating in class C mode under Mode S-ELM pulse burst conditions at VCC = 48V, this common base device supplies a minimum of 470 watts of peak pulse power. It utilizes a low loss internal input impedance matching structure to yield maximum device gain and to ease the implementation of external matching circuitry. The new generation bipolar transistor geometry utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.

Features

Silicon Bipolar

  • Ultra-high fT

Class C Operation

  • High Efficiency
Common Base Configuration
  • Single Power Supply
Gold Metal
  • Maximum Reliability
Emitter Ballasting
  • Optimum Thermal Distribution
Internal Impedance Matching
  • Ease of Use
  • Ultra-low Loss Design
Be0 Package
  • Unmatched Thermal Reliability
RF Test Fixture
  • Broadband
  • Matched to 50ohms
  • Long-term Correlation
  • 100% Device RF Screening
  • No External Tuning Allowed
  • Micro-strip structure on soft pc board

Downloads:
•Datasheet: IB1011L470 L-Band Avionics Transistor