Datasheet | October 15, 2008

Datasheet: 0405SC-1000M Silicon Carbide Static Induction Transistor

Source: Microsemi Corporation

Microsemi Corporation recently announced its first two RF power transistors utilizing silicon carbide technology for high power VHF and UHF band pulsed radar applications.

Designated 0150SC-1250M and 0405SC-1000M, these RF Power transistors utilize state-of-the-art silicon carbide technology designed for VHF - 150 to 160 MHz, and UHF - 406 to 450 MHz respectively. These high performance, common gate, class AB, high power transistors offer the industry's highest power output, typical 1400W at VHF and 1100W at UHF of peak power in compact single-ended packages.