Datasheet | May 25, 2004

Datasheet: MwT-GK K-Band 18-26.5GHz Gunn Diode

Source: MicroWave Technology, Inc.
Based on MwT preparatory epitaxial profile design and process technology, MwT-GK is a Gunn diode device targeted at CW and pulsed K-band (18-26.5 GHz) frequency source applications. The device has output power of 13 dBm with excellent chirp performance in pulsed operation mode. The device is fabricated at MwT GaAs fab using process technologies with proven reliability and robustness. MwT-GK is available in die or packaged form.

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