transistors-products
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GaN S-Band 50Ω Transistor: IGT2731M130
4/11/2018
Integra Technologies introduces IGT2731M130 transistor with GaN on SiC HEMT technology, and exhibits 16 dB typical gain and 50% drain efficiency. It is ideal for applications operating in the 2.7-3.1 GHz frequency range. This depletion mode device is 100% high power RF tested in a 50Ω RF test fixture.
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S-Band Medical Transistors
2/15/2007
Integra’s lineup of S-band silicon bipolar power transistors with the world’s highest power output, are unmatched by any other vendor. These transistors are designed to address the most stringent requirements for medical, civilian and military radar, including ground, naval, and airborne mechanically and electronically scanned antennas
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RF Transistor for Secondary Surveillance Radar Aviation: 1011GN-700ELM
9/5/2012
This common source class AB, GaN on SiC HEMT RF power transistor has been specifically designed for Mode-S ELM applications, and secondary surveillance radar (SSR) applications. SSR allows air traffic controllers to identify, track, and measure an airplane’s location.
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GaN RF IMFET: QPD1018
11/3/2022
The QPD1018 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 2.7 to 3.1 GHz and a 50V supply rail.
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HF50-Series Bipolar Power Transistors
1/20/2009
Spectrum Devices is your source for low frequency high power devices. From legacy products to new designs, our 50 volt products offer drop-in equivalence to other manufacturers.
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HF50-250 Bipolar Power Transistor
7/28/2009
The HF50-250 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness and reliability.
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3400 – 3600 MHz Thermally-Enhanced High-Power RF GaN On SiC HEMT: GTRA364002FC
9/17/2018
Wolfspeed’s new GTRA364002FC is a thermally-enhanced high-power RF GaN on SiC HEMT designed for multi-standard cellular power amplifier and other wireless infrastructure applications in the 3400 – 3600 MHz frequency range. The device features an output power of 400 W, 13 dB gain, and operation at 48 V.
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UHF-Band RF Power MOSFET Transistor
2/6/2007
This high power transistor part number IDM500CW200 is designed for VHF/UHF-Band systems operating at 1 to 500 MHz. Operating at CW conditions, this dual MOSFET device supplies a minimum of 200 watts of power across the instantaneous operating bandwidth of 1 to 500 MHz
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High L-Band Series Transistors
1/30/2006
The High L-Band series transistors from Advanced Power Technology consists of three model types: 1517-20M, 1517-110M, and 1517-250M which cover the frequency for High L-Band Radar Applications from 1480 to 1650 MHz with a pulsed output power of 20W, 110W, and 250W respectively...
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Insulated-gate Bipolar Transistors (IGBTS)
10/3/2012
Richardson RFPD’s Insulated-gate Bipolar Transistors (IGBTS) use Microsemi’s leading-edge Power MOS 8™ technology and offer a dramatic reduction of twenty percent or more, in total switching and conduction losses as compared to competitive solutions.