RF Test And Measurement Resource Center

TEST & MEASUREMENT APPLICATION NOTES AND WHITE PAPERS

Top 5 Strategies For 5G Component Characterization And Test
Component manufacturers need to deploy effective strategies for characterization and test regardless of the component types. This white paper presents five strategies for 5G component characterization and testing.
Ray-Optical Modeling Of Wireless Coverage Enhancement Using Engineered Electromagnetic Surfaces
In this paper, results are presented of propagation experiments conducted to verify the accuracy of a novel ray-optical scattering model for EES.
De-Embedding Test Fixtures For High-Speed Digital Applications
Test fixtures are commonly used in high-speed digital measurement to connect devices to measurement equipment. Characterization and analysis in time and frequency domains help remove the influence of these fixtures.
Linearity Of The JFET And MOSFET When In Saturation Over The Entire Cycle
Performing RF amplification in a way that is simultaneously linear and efficient has been a challenge in power amplifier (PA) design. Single transistor PAs can either be operated in a linear, but inefficient, current source mode of operation or as efficient, but nonlinear, switches. These techniques use two FETs, but this paper demonstrates that linear amplification can be achieved at high power with an efficiency greater than 60%, using a single FET.
An Introduction To Direction Finding Methodologies
All direction finding methodologies are meant to determine the physical or geographical location of a source of radio frequency energy. The choice of an appropriate direction finding methodology to use for a given application is largely a function of the target signal's characteristics, such as frequency and modulation, but is also influenced by the propagation environment as well as cost and complexity. Recent advances in the development of hybrid direction finding methodologies attempt to overcome some of these restrictions and increase accuracy by using a combination of methodologies.

More Test & Measurement Application Notes and White Papers

TEST & MEASUREMENT SOLUTIONS

The Microwave VME/VXS Tuner by Hunter Technology is the industry’s smallest available microwave SIGINT VME tuner. It covers the 500 MHz-20.0 GHz and 30.0 GHz to 40.0 GHz frequency ranges and features incredibly fast tuning, low phase noise, excellent mechanical conductivity, a single slot 6U VME configuration, and much more.

Small Form Factor 8-Channel RF A/D & D/A Subsystem: Model 6350S

The Model 6350S is a small form factor 8-channel A/D & D/A subsystem designed for a variety of applications including high-bandwidth data streaming, waveform signal generators, multimode data acquisition, and other electronic warfare systems. Designed to be integrated into larger systems with minimal design effort, the 6350S delivers the performance and high-channel density of RFSoC in a small, convenient footprint.

Si8935/36/37 Isolated Delta-Sigma Modulator For Voltage Measurement

The SI893x’s 0 to 2.25 V specified input range is ideal for isolated voltage sensing. The Si8935/36/37 provides delta-sgma modulated output with flexible options for external or internally generated clock.

Instantaneous Frequency Measurement Unit: dB-9001

The dB-9001 from dB Control is a custom-mounted Instantaneous Frequency Measurement (IFM) unit designed to operate in the C, X, and Ku-band frequency range and provide highly accurate measurements at 100 ns to CW pulse width measurements.

TWT Amplifier: dB-3906

The dB-3906 TWT Amplifier (TWTA) is designed to use two wideband, periodic permanent magnet (PPM)-focused TWTs to amplify CW, AM, FM or pulse-modulated signals. The dB-3906 offers higher saturated output power and improved harmonic performance when compared to a single TWT approach.

Current Probe Fixtures

The A.H. Systems' line of Current Probe Calibration Fixtures are a great way to keep your broadband Current Probes, and Injection Current Probes calibrated and up to date. Their rugged design ensures long life, and faultless operation over the wide calibration frequency range of 10 kHz to 1000 MHz.

1800 W, 65 V, 1.0 – 1.1 GHz Highest Power GaN Transistor On The Market: QPD1025L

Qorvo offers the 1800 W, 65 V, 1.0 – 1.1 GHz QPD1025L as the highest GaN transistor on the market. This discrete GaN on SiC HEMT has a package that features input pre-match resulting in ease of external board match and saved board space.