TEST & MEASUREMENT APPLICATION NOTES AND WHITE PAPERS

• On-Wafer Characterization At sub-THz Frequencies

  New technologies and applications extend into sub-THz frequencies in the D band and beyond. New semiconductor technologies and processes need to be commercialized to support these efforts.

• Measurement Setup For Phase Noise Test At Frequencies Above 50 GHz

  Recent semiconductor technologies require more of the frequency range beyond 50 GHz, especially in wideband applications, such as 802.11ad, microwave links, or automotive RADAR. Low phase noise is essential for these applications to work properly, and accurate measurement of phase noise is needed to improve the performance. However, test setups at these frequencies become difficult, especially when cross correlation of two receive paths is needed to suppress additional phase noise.

• VSWR Conversion To Reflected Power

  VSWR measures how efficiently RF power is transmitted through a load, with high VSWR indicating poor efficiency. Explore VSWR's relation to return loss, reflection coefficient, and mismatch loss.

• Noise Figure: What Is It And Why Does It Matter?

  Noise figure is a key parameter that quantifies receiver performance by measuring how low a power a signal receiver can detect. This white paper covers the basic principles of noise figure, how to make sense of its specifications, how it is measured, and why this parameter is important in high-performance applications.

• Linearity Of The JFET And MOSFET When In Saturation Over The Entire Cycle

  Performing RF amplification in a way that is simultaneously linear and efficient has been a challenge in power amplifier (PA) design. Single transistor PAs can either be operated in a linear, but inefficient, current source mode of operation or as efficient, but nonlinear, switches. These techniques use two FETs, but this paper demonstrates that linear amplification can be achieved at high power with an efficiency greater than 60%, using a single FET.