TEST & MEASUREMENT APPLICATION NOTES AND WHITE PAPERS

• Verifying The Clock Source

  In order to select or develop a clock generator to use in your design or to ensure that the supplied system clock has the proper performance, you'll need to consider phase noise, jitter, wideband noise and spurs as performance indicators.

• Simplify Coexistence And Interference Testing For GNSS Receivers

  The R&S®SMW200A GNSS simulator offers an easy and convenient way to test your receiver design against a wide variety of potential interferers and jammers. Test cases extend from simple coexistence simulations to complex interference scenarios with localized emitters.

• Circuit Models For Plastic Packaged Microwave Diodes

  This paper reports on the measurement and establishment of circuit models for SOT-23 and SOD-323 packaged diodes. Results indicate that the 1.5 nH estimate for the SOT-23 is a useful result, as is 1.2 nH for SOD-323 single packaged diodes. It was also determined that the effective inductance of the SOT-23 may be reduced to approximately 0.4 nH by adding a second bond wire and modifying the microstrip line. Other lead configurations, including parallel bond wires and common cathode configurations, were also studied.

• Making Higher Accuracy Oscilloscope Measurements

  One of the most important functional blocks in a digital oscilloscope is the analog-to-digital converter or ADC. This white paper explains why ADC resolution has become a more important consideration in oscilloscopes, especially for measuring small signal details.

• Linearity Of The JFET And MOSFET When In Saturation Over The Entire Cycle

  Performing RF amplification in a way that is simultaneously linear and efficient has been a challenge in power amplifier (PA) design. Single transistor PAs can either be operated in a linear, but inefficient, current source mode of operation or as efficient, but nonlinear, switches. These techniques use two FETs, but this paper demonstrates that linear amplification can be achieved at high power with an efficiency greater than 60%, using a single FET.