Current Probes

Qorvo offers the QPC6222 double-pole double-throw (DPDT) transfer switch designed for general purpose switching applications where RF port transfer control is needed, including data cards, IoT, telemetry, automotive, cellular modems, USB devices, and multi-mode WCDMA and LTE. Some key features for this switch are its low insertion loss, high linearity performance, high-port-to-port isolation, and power handling up to +35 dBm.

The QPB3810 is an integrated 2-stage GaN Doherty Power Amplifier Module with a Bias Controller designed for m-MIMO applications with 8W RMS at the device output.

Qorvo delivers the QPL7442 low noise, high gain, wide bandwidth MMIC pHEMT single ended RF amplifier IC featuring 20 dB of flat gain. This IC is designed to support CPE front end, cable, satellite and terrestrial TV, home gateways, and cable modems from 50 to 4000 MHz using a single 5 V supply.

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. 

BNC offers the Model 525 digital pulse generator designed with full feature functions in a compact 7.125” x 5.1” x 1.5” cost-effective package. The Model 525's interface is USB only, which eliminates the bulky front panel components and reduces the potential for mechanical problems.

The MEQ10-45CSP1 is a passive MMIC equalizer QFN ideal for compensating for low pass filtering effects in RF/microwave and high speed digital systems. 

The AMP20102 solid state high power amplifier is a versatile, high-performance solution designed for EMI/RFI, lab, continuous wave (CW)/pulse, and communication applications.

The ADRF5424 is a reflective, single-pole double-throw (SPDT) switch manufactured in a silicon process attached on a gallium arsenide (GaAs) carrier substrate. The substrate incorporates the bond pads for chip and wire assembly, and the bottom of the device is metalized and connected to ground.