Current Probes

The series of GORE^® VNA microwave/RF test assemblies from W.L. Gore are designed to provide the most precise VNA measurements in laboratory conditions, setting the standard for vector network analyzers (VNAs) through 70 GHz. These test assemblies deliver the highest accuracy and greatest time intervals between recalibrations for many applications, including those with vector network analyzers, critical measurements, and laboratory testing.

The ADAR1000 is a 4-channel, X and Ku frequency band, beamforming core chip for phased arrays. This device operates in half-duplex between receive and transmit modes.

Qorvo offers a large range of GaN on SiC power transistors as premiere solutions for GaN needs. These discrete power amplifiers are available in models that cover frequency ranges from DC-18 GHz. With a range of linear gain between 16.6 – 21 dB, and a saturated output power range between 37 and 54.2 dBm, these devices are ideal for a wide variety of broadband wireless, space, and military applications.

Skyworks offers the SKYFR-001982 single-junction, surface-mount circulator designed for radar and power amplifier applications. It is designed to operate over the 1200 MHz to 1400 MHz with an operating temperature range of -40 °C to +85 °C.

As the global life expectancy continues to get longer, the demand for electronic medical implantable devices is growing. Knowles offers a variety of capacitor solutions for the medical implant industry.

These end-fed sleeve dipole antennas are truly omni-directional having excellent symmetry with low VSWR. These dipoles are an excellent solution as a reference for antenna gain measurements, wireless testing and chamber reflectivity evaluation. The end-fed connection point allows better performance in symmetry, ideal for the requirement of a truly omni-directional antenna.

The QPA2511 is a two-stage L-band internally matched GaN power amplifier module that operates at pulsed RF CW in frequency range 1.2-1.4 GHz providing 50 dBm of saturated output power with 29 dB of large-signal gain.

The ADRF5300 is a reflective, SPDT switch manufactured in the silicon process, developed for 5G applications ranging from 24 GHz to 32 GHz. The ADRF5300 has a low insertion loss of 1.1 dB, a high isolation of 38 dB, and an RF input power handling capability of 28 dBm average and 36 dBm peak.