Current Probes

The dB-4051 and dB-4051A are advanced rack-mounted Ka-Band traveling wave tube amplifiers (TWTAs) designed for high-performance applications in the frequency range of 17.5 to 40 GHz. 

The ADRF5515A is a dual-channel, integrated RF, front-end, multichip module designed for time division duplexing (TDD) applications. The device operates from 3.3 GHz to 4.0 GHz. The ADRF5515A is configured in dual channels with a cascading, two-stage low noise amplifier (LNA) and a high-power silicon singlepole, double-throw (SPDT) switch.

Qorvo offers a large range of GaN on SiC power transistors as premiere solutions for GaN needs. These discrete power amplifiers are available in models that cover frequency ranges from DC-18 GHz. With a range of linear gain between 16.6 – 21 dB, and a saturated output power range between 37 and 54.2 dBm, these devices are ideal for a wide variety of broadband wireless, space, and military applications.

The Surelite™ OPO Plus is ideal for moderate resolution applications, and offers versatility and convenience in an economical package.

The PTXM9754 is an ultra compact modular microwave power module (MPM) with an integrated “super mini” travelling wave tube (TWT), a solid state preamplifier and an optimised high density switch mode power supply.

The HMC8413 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01 GHz to 9 GHz.

The QPA2513 is a 2-stage S-Band internally matched GaN Power Amplifier Module. The QPA2513 operates at pulsed RF CW in frequency range 3.1 -3.5 GHz providing typically 51dBm of saturated output power with 30dB of large-signal gain and 62% of power added efficiency.

The Si4133W is a completely integrated RF synthesizer for third-generation (3G) wireless communications. The device, a dual-band RF synthesizer...