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TRANSISTORS PRODUCTS & SERVICES
A family of low-noise pseudomorphic high-electron mobility transistors (PHEMT) uses the company’s latest-generation gallium arsenide (GaAs) fabrication process
Low Noise Discrete Transistor: SKY65052-372LF
The SKY65052-372LF is a high performance, low noise, n-channel transistor. The device is fabricated from Skyworks advanced depletion mode pHEMT process and packaged in a miniature 4-lead SC-70 package. The transistor's low NF, high gain, and excellent third order intercept point (IP3) allow this transistor to be used in various receiver and transmitter applications.
DME800 Avionics Transistor
APT-RF’s Avionics Transistor, 800W, Class C, common base power transistor is designed for broadband DME systems covering 1025-1150 MHz...
1011LD300 LDMOS Avionics Transistor
APT RF’s LDMOS Avionics Transistor, 300W, Class AB, common source LDMOS power transistor is designed for Transponder/Interrogator systems covering 1030-1090 MHz...
A family of 900-MHz high-power RF transistors is optimized for amplification of cellular base station signals
450MHz 500W UHF Radar Transistor
The high power pulsed radar transistor device part number IB450S500 is designed for UHF radar systems operating at 450 MHz. While operating in class C mode this common base device supplies a minimum of 500 watts of peak pulse power under the conditions of 30us pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters...
RF Power Transistor
The PTF 10149 RF power transistor is intended for use in applications in the 920-960 MHz band
960-1215 MHz 500W Avionics TACAN Transistor
The high power pulsed transistor device part number IB0912M500 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under TACAN pulsing conditions and Vcc=50V, this common base device supplies a minimum of 500 watts of peak pulse power. It utilizes a low loss internal input impedance matching structure to yield maximum device gain and to ease the implementation of external matching circuitry. The new generation bipolar transistor geometry utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All transistors are 100% screened for large signal RF parameters.
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