Transistors

TRANSISTORS PRODUCTS & SERVICES

960-1215 MHz 500W Avionics TACAN Transistor

960-1215 MHz 500W Avionics TACAN Transistor

The high power pulsed transistor device part number IB0912M500 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under TACAN pulsing conditions and Vcc=50V, this common base device supplies a minimum of 500 watts of peak pulse power. It utilizes a low loss internal input impedance matching structure to yield maximum device gain and to ease the implementation of external matching circuitry. The new generation bipolar transistor geometry utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All transistors are 100% screened for large signal RF parameters.
Low Noise Discrete Transistor: SKY65053-377LF

Low Noise Discrete Transistor: SKY65053-377LF

The SKY65053-377LF is a high performance, n-channel lownoise transistor. The device is fabricated from Skyworks advanced depletion mode pHEMT process and is provided in a 2 x 2 mm, 4-pin Quad Flat No-Lead (QFN) package.
GaN MMIC Amplifiers/Transistors

GaN MMIC Amplifiers/Transistors

Northrop Grumman’s first three entries in their GaN MMIC Amplifiers/Transistors have been developed for defense and commercial ground satellite communications terminal markets and the commercial wireless infrastructure market. These GaN MMIC Amplifiers/Transistors are ideal for several applications including point-to-point radio, phased-array radar, Military SatCom, and point-to-multipoint communications, SATCOM terminals, and more. Links to datasheets of the amplifiers that make up this line can be found below.

Power Transistors And Modules For S-Band Radar

Power Transistors And Modules For S-Band Radar

Microsemi’s new S-Band power modules provide a complete design solution, combining two Microsemi transistors in hermetically sealed packages, with input/output circuitry matched to 50 ohm. Their high performance specifications feature excellent rated power with greater than 40% collector efficiency and superior power flatness of less than 0.5 dB. The transistors utilize advanced Microsemi chip design and processing enhancements for high power and high gain with a 100us pulse width and 10% duty cycle over the S-Band frequency range.
2GHz RF Transistors

2GHz RF Transistors

A family of 2-GHz high-power RF transistors features the PTF10120, 10043, 10035, and 10112 models
TCS800  Avionics Transistor

TCS800 Avionics Transistor

APT RF’s Avionics Transistor, 800W, Class C, common base power transistor is designed for TCAS systems covering 1030-1090 MHz with 32uS, 1% pulsing at Vcc = 50V
Wideband RF Transistors

Wideband RF Transistors

The PTF 10049 and PTF 10037 families of wideband, high-power, RF transistors are designed for use in the amplification of UHF frequencies
RF Power Transistor: 250 Watt, 50 Volt HF50-250

RF Power Transistor: 250 Watt, 50 Volt HF50-250

The HF50-250 RF Power transistor is designed for the 50V, 2-30 MHz RF Amplifier, RF Power Supply and RF Power Generator markets. Operating at 30 MHz and 50 Volts DC, the device will provide a minimum Power Gain of 14.5 dB, with the minimum Output Power specified at 250 Watts, PEP.
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