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TRANSISTORS PRODUCTS & SERVICES
High-Efficiency Power Transistor: RF3932
The RF3932 High-Efficiency Power Transistor is a 48V, 60W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical, and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN)semiconductor process, these high-performance amplifiers achieve high efficiency and flat gain over a broad frequency range in a single amplifier design.
800-1000 MHz 12W P-Band Radar Transistor
The IB0810M12 is a 12 watt, common base silicon bipolar transistor intended to operate in class C mode over the instantaneous operating frequency band of 870-990 MHz
0405-1000M - 400 To 450 MHz UHF Power Transistor
The 0405-1000M transistor from Microsemi Power Products Group is designed for UHF frequency, 400 to 450 MHz. This high performance, common emitter, class C, output stage offers unparalleled performance of 1000W of peak power, 70% collector efficiency at 450 MHz, and is in a hermetically sealed package for the best reliability for weather radar and over the horizon radar applications...
S-Band Medical Transistors
Integra’s lineup of S-band silicon bipolar power transistors with the world’s highest power output, are unmatched by any other vendor. These transistors are designed to address the most stringent requirements for medical, civilian and military radar, including ground, naval, and airborne mechanically and electronically scanned antennas
CW VDMOS Transistors
Integra's newly released series of CW VDMOS transistors once again sets the standard for output power, gain, and efficiency. All of these push pull devices feature gold metallization for maximum reliability and are available now
RF Power Transistor: 250 Watt, 50 Volt HF50-250
The HF50-250 RF Power transistor is designed for the 50V, 2-30 MHz RF Amplifier, RF Power Supply and RF Power Generator markets. Operating at 30 MHz and 50 Volts DC, the device will provide a minimum Power Gain of 14.5 dB, with the minimum Output Power specified at 250 Watts, PEP.
ntegra’s lineup of UHF silicon bipolar and MOSFET high power transistors boasts industry leading performance. These common source and common base power devices offer the highest pulsed RF power and smallest circuit footprint available in any UHF silicon bipolar and MOSFET high power transistor
Designed for CDMA and TDMA applications in the PCS band, model PTF10112 is an RF transistor that features gold top metal and gold bond wires
More Transistors Products & Services
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