Transistors

The MDS500L is a Vcc = 50V, class C bipolar transistor specifically designed to handle the heavy pulsing of the Mode-S ELM format (32uS on / 18uS off x 48pulses burst). The transistor provides greater than 500W of output power with an input power of 70W...

The SKY65051-377LF is a high performance, n-channel lownoise transistor. The device is fabricated from Skyworks advanced depletion mode pHEMT process and is provided in a 2 x 2 mm, 4-pin Quad Flat No-Lead (QFN) package.

The new VRF152 from Microsemi is a gold-metalized silicon n-channel RF power transistor designed for broadband commercial and hi-rel applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulations distortion. It can operate up to 175MHz at 150W with a typical gain of 13dB at very high efficiency on a 50V DC supply.

APT RF’s Avionics Transistor, 800W, Class C, common base power transistor is designed for TCAS systems covering 1030-1090 MHz with 32uS, 1% pulsing at Vcc = 50V

Avionics Transistor, 350W, Class C, common base power transistor is designed for transponder avionics applications at 1090 MHz with 10uS, 1% pulsing at Vcc = 50V

Designed for CDMA and TDMA applications in the PCS band, model PTF10112 is an RF transistor that features gold top metal and gold bond wires

This GaN RF Power Transistor operates in the DC-6 GHz frequency range. It’s ideal for applications involving jammers, military and civilian radar, test instrumentation, professional and military radio communications, and wideband or narrowband amplifiers.

The 0405-500L is an internally-matched, common emitter transistor capable of providing 500 Watts of pulsed RF output power in a push-pull configuration at one thousand and one hundred microsecond pulse width twenty–six percent duty factor across the frequency band 400 to 450 MHz