Transistors

TRANSISTORS PRODUCTS & SERVICES

VRF152 -- RF Power Vertical MOSFET Transistor

VRF152 -- RF Power Vertical MOSFET Transistor

The new VRF152 from Microsemi is a gold-metalized silicon n-channel RF power transistor designed for broadband commercial and hi-rel applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulations distortion. It can operate up to 175MHz at 150W with a typical gain of 13dB at very high efficiency on a 50V DC supply.
TAN350 Avionics Transistor

TAN350 Avionics Transistor

APT-RF’s Avionics Transistor, 350W, Class C, common base power transistor is designed for broadband TACAN systems covering 960-1215 MHz with 10uS, 10% pulsing at Vcc = 50V
High Power 1214-370M Transistor

High Power 1214-370M Transistor

This transistor provides RF pulsed Peak Power of 370 Watts at 330 us, 10%.
HF50-250 Bipolar Power Transistor

HF50-250 Bipolar Power Transistor

The HF50-250 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness and reliability.
TCS800  Avionics Transistor

TCS800 Avionics Transistor

APT RF’s Avionics Transistor, 800W, Class C, common base power transistor is designed for TCAS systems covering 1030-1090 MHz with 32uS, 1% pulsing at Vcc = 50V
Insulated-gate Bipolar Transistors (IGBTS)

Insulated-gate Bipolar Transistors (IGBTS)

Richardson RFPD’s Insulated-gate Bipolar Transistors (IGBTS) use Microsemi’s leading-edge Power MOS 8™ technology and offer a dramatic reduction of twenty percent or more, in total switching and conduction losses as compared to competitive solutions.

ARF477FL -- RF Power MOSFET Transistors

ARF477FL -- RF Power MOSFET Transistors

The new ARF477FL is a 500V (BVdss) push-pull matched pair transistor product providing up to100MHz operation in the ISM Band for industrial, scientific and medical applications including semiconductor capital equipment and MRI systems...
800-1000 MHz 12W P-Band Radar Transistor

800-1000 MHz 12W P-Band Radar Transistor

The IB0810M12 is a 12 watt, common base silicon bipolar transistor intended to operate in class C mode over the instantaneous operating frequency band of 870-990 MHz
More Transistors Products & Services
Newsletter Signup
Newsletter Signup
Get the latest RF/microwave industry news, insights, and analysis delivered to your inbox.
Join your peers
By clicking Sign Me Up, you agree to our Terms and that you have read our Privacy Policy.