GaN on SiC Power Transistors GaN on SiC Power Transistors

Qorvo offers a large range of GaN on SiC power transistors as premiere solutions for GaN needs. These discrete power amplifiers are available in models that cover frequency ranges from DC-18 GHz. With a range of linear gain between 16.6 – 21 dB, and a saturated output power range between 37 and 54.2 dBm, these devices are ideal for a wide variety of broadband wireless, space, and military applications.

Mobility Transistors Mobility Transistors
A family of low-noise pseudomorphic high-electron mobility transistors (PHEMT) uses the company’s latest-generation gallium arsenide (GaAs) fabrication process
RF Power Transistor RF Power Transistor
The PTF 10149 RF power transistor is intended for use in applications in the 920-960 MHz band
RF Power Transistor Series
The PD5xxxx series of radio-frequency (RF) power transistors is aimed at wireless base station and mobile radio applications where high volume...
RF Transistor RF Transistor
Designed for CDMA and TDMA applications in the PCS band, model PTF10112 is an RF transistor that features gold top metal and gold bond wires
Wideband RF Transistors Wideband RF Transistors
The PTF 10049 and PTF 10037 families of wideband, high-power, RF transistors are designed for use in the amplification of UHF frequencies
900-MHz Transistors 900-MHz Transistors
A family of 900-MHz high-power RF transistors is optimized for amplification of cellular base station signals
RF Transistors RF Transistors
Wideband RF transistors are optimized for amplification of DAB and DAR signals
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