Transistors

TRANSISTORS PRODUCTS & SERVICES

High-Efficiency Power Transistor: RF3932

High-Efficiency Power Transistor: RF3932

The RF3932 High-Efficiency Power Transistor is a 48V, 60W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical, and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN)semiconductor process, these high-performance amplifiers achieve high efficiency and flat gain over a broad frequency range in a single amplifier design.
Avionics Pulsed Power RF Transistors

Avionics Pulsed Power RF Transistors

Avionics Pulsed Power RF Transistors, M/A-COM MAPRST1030-1KS, a new 1,000 W peak, class C bipolar transistor designed for 1030 MHz pulsed avionics applications
HF12-Series Bipolar Power Transistors

HF12-Series Bipolar Power Transistors

Spectrum Devices is your source for low frequency high power devices. From legacy products to new designs, our 12 volt products offer drop-in equivalence to other manufacturers.
NPN Wideband Silicon RF Transistor: BFU630F

NPN Wideband Silicon RF Transistor: BFU630F

NXP offers a complete portfolio of SiGe:C wideband transistors for maximum performance and design flexibility, and the BFU630F product is a good example of it. This BFU630F wideband transistor delivers extremely low noise and high maximum gain, making it ideal for sensitive RF receivers in high-performance applications such as next-generation cell phones. At the same time, the high operating frequencies are ideal for use in microwave applications in the 10 to 30 GHz range, such as satellite TV receivers and automotive collision avoidance radar. NXP’s innovative silicon-germanium-carbon (SiGe:C) BiCMOS processes enable this outstanding performance, combining the performance of gallium-arsenide (GaAs) technologies with the reliability of silicon-based processes.
Power Transistors And Modules For S-Band Radar

Power Transistors And Modules For S-Band Radar

Microsemi’s new S-Band power modules provide a complete design solution, combining two Microsemi transistors in hermetically sealed packages, with input/output circuitry matched to 50 ohm. Their high performance specifications feature excellent rated power with greater than 40% collector efficiency and superior power flatness of less than 0.5 dB. The transistors utilize advanced Microsemi chip design and processing enhancements for high power and high gain with a 100us pulse width and 10% duty cycle over the S-Band frequency range.
HF50-Series Bipolar Power Transistors

HF50-Series Bipolar Power Transistors

Spectrum Devices is your source for low frequency high power devices. From legacy products to new designs, our 50 volt products offer drop-in equivalence to other manufacturers.
SKY65050-372LF - Low-Noise Transistor

SKY65050-372LF - Low-Noise Transistor

The SKY65050-372LF is a high performance, low noise, n-channel, depletion mode pHEMT, fabricated from Skyworks advanced pHEMT process and packaged in a miniature 4-lead SC-70 package. The transistor's low noise figure,high gain and excellent third order intercept (IP3) allows this transistor to be used in various receiver and transmitter applications.
S-Band Medical Transistors

S-Band Medical Transistors

Integra’s lineup of S-band silicon bipolar power transistors with the world’s highest power output, are unmatched by any other vendor. These transistors are designed to address the most stringent requirements for medical, civilian and military radar, including ground, naval, and airborne mechanically and electronically scanned antennas
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