Transistors

Qorvo offers a 500 W, internally matched discrete GaN on SiC HEMT operating in the 1.2 to 1.4 GHz range. This device is fully matched to 50 Ohm, can support pulsed and linear operations, and is ideal for civilian and military radar applications.

The QPD1028 is a 750W discrete GaN on SiC HEMT that operates from 1.2 to 1.4 GHz, providing typically 59dBm of saturated output power with 18dB of large-signal gain and 70% of drain efficiency.

The PD5xxxx series of radio-frequency (RF) power transistors is aimed at wireless base station and mobile radio applications where high volume...

The Qorvo QPD1022 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz. This wideband device is a single stage unmatched power amplifier transistor in an over-molded plastic package. The wide bandwidth of the QPD1022 makes it suitable for many different applications from DC to 12 GHz.

Wideband RF transistors are optimized for amplification of DAB and DAR signals

The Qorvo QPD1016 is a 500 W (P3dB) pre-matched discrete GaN on SiC HEMT which operates from DC to 1.7 GHz and 50 V supply.

Qorvo offers a wideband, 28 V, 50-Ohm input-matched RF transistor that is ideal for commercial and defense communications applications. This device has an integrated matching network that allows for wideband gain and power performance, while the output is simultaneously matched to optimize power and efficiency for any region within the band.

Qorvo offers the TGM2635-CP 100W GaN as an X-band, high power MMIC amplifier fabricated on Qorvo’s GaN on SiC Process. Its package is a 10-lead bolt-down with a cure Cu base for superior thermal management. Both RF ports allow for simple system integration, making the amplifier ideally suited for both military and commercial x-band radar systems and data links.