Transistors

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DC - 12 GHz, 10 Watt, 32 V GaN RF Transistor: QPD1022
DC - 12 GHz, 10 Watt, 32 V GaN RF Transistor: QPD1022

The Qorvo QPD1022 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz. This wideband device is a single stage unmatched power amplifier transistor in an over-molded plastic package. The wide bandwidth of the QPD1022 makes it suitable for many different applications from DC to 12 GHz.

GaN on SiC Power Transistors
GaN on SiC Power Transistors

Qorvo offers a large range of GaN on SiC power transistors as premiere solutions for GaN needs. These discrete power amplifiers are available in models that cover frequency ranges from DC-18 GHz. With a range of linear gain between 16.6 – 21 dB, and a saturated output power range between 37 and 54.2 dBm, these devices are ideal for a wide variety of broadband wireless, space, and military applications.

qorvo QPD2025D
Discrete Transistor: QPD2025D

Qorvo's QPD2025D is a discrete 250-micron pHEMT which operates from DC to 20 GHz. The QPD2025D is designed using Qorvo's proven standard 0.25um power pHEMT production process. 

RF Power Transistor Series
The PD5xxxx series of radio-frequency (RF) power transistors is aimed at wireless base station and mobile radio applications where high volume...
Qorvo - QPD1425L_PDP
1.2 - 1.4 GHz, 375 Watt, 65 Volt , GaN On SiC RF Transistor: QPD1425L

The QPD1425L is a 375W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 56.3dBm of saturated output power with 17dB of large-signal gain and 75% of drain efficiency.

900-MHz Transistors
900-MHz Transistors
A family of 900-MHz high-power RF transistors is optimized for amplification of cellular base station signals
qpd1004a
25W, 30-1200 MHz, GaN RF Input-Matched Transistor: QPD1004A

QPD1004A is a 25W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz.

50-Ohm GaN RF Input-Matched Transistor: QPD1000
50-Ohm GaN RF Input-Matched Transistor: QPD1000

Qorvo offers a wideband, 28 V, 50-Ohm input-matched RF transistor that is ideal for commercial and defense communications applications. This device has an integrated matching network that allows for wideband gain and power performance, while the output is simultaneously matched to optimize power and efficiency for any region within the band.

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