Transistors

TRANSISTORS PRODUCTS & SERVICES

RF Transistor for Secondary Surveillance Radar Aviation: 1011GN-700ELM

RF Transistor for Secondary Surveillance Radar Aviation: 1011GN-700ELM

This common source class AB, GaN on SiC HEMT RF power transistor has been specifically designed for Mode-S ELM applications, and secondary surveillance radar (SSR) applications. SSR allows air traffic controllers to identify, track, and measure an airplane’s location.

0405-500L: UHF Transistor For Long Pulsed Radar Applications

0405-500L: UHF Transistor For Long Pulsed Radar Applications

The 0405-500L is an internally-matched, common emitter transistor capable of providing 500 Watts of pulsed RF output power in a push-pull configuration at one thousand and one hundred microsecond pulse width twenty–six percent duty factor across the frequency band 400 to 450 MHz
RF Transistor

RF Transistor

Model PTF 10100 is a 900-MHz transistor optimized for amplification of cellular base station signals
TCS800  Avionics Transistor

TCS800 Avionics Transistor

APT RF’s Avionics Transistor, 800W, Class C, common base power transistor is designed for TCAS systems covering 1030-1090 MHz with 32uS, 1% pulsing at Vcc = 50V
Low Noise Discrete Transistor:  SKY65052-372LF

Low Noise Discrete Transistor: SKY65052-372LF

The SKY65052-372LF is a high performance, low noise, n-channel transistor. The device is fabricated from Skyworks advanced depletion mode pHEMT process and packaged in a miniature 4-lead SC-70 package. The transistor's low NF, high gain, and excellent third order intercept point (IP3) allow this transistor to be used in various receiver and transmitter applications.
Power Transistors And Modules For S-Band Radar

Power Transistors And Modules For S-Band Radar

Microsemi’s new S-Band power modules provide a complete design solution, combining two Microsemi transistors in hermetically sealed packages, with input/output circuitry matched to 50 ohm. Their high performance specifications feature excellent rated power with greater than 40% collector efficiency and superior power flatness of less than 0.5 dB. The transistors utilize advanced Microsemi chip design and processing enhancements for high power and high gain with a 100us pulse width and 10% duty cycle over the S-Band frequency range.
High Power 1214-370M Transistor

High Power 1214-370M Transistor

This transistor provides RF pulsed Peak Power of 370 Watts at 330 us, 10%.
Low Noise Discrete Transistor: SKY65051-377LF

Low Noise Discrete Transistor: SKY65051-377LF

The SKY65051-377LF is a high performance, n-channel lownoise transistor. The device is fabricated from Skyworks advanced depletion mode pHEMT process and is provided in a 2 x 2 mm, 4-pin Quad Flat No-Lead (QFN) package.
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