Transistors

A family of 900-MHz high-power RF transistors is optimized for amplification of cellular base station signals

Qorvo offers a family of GaN transistors designed to serve a wide range of defense and commercial applications, including types of radar, communications, avionics, and test instrumentation. These transistors have an operating voltage of 50 V, are CW and pulsed capable, unmatched, and are lead-free and ROHS compliant.

The QPD1009 and QPD1010 are discrete GaN on SiC HEMTs operating from the DC to 4 GHz frequency range. The QPD1009 is a 15W, 50V device with an output power level of 17W at 2 GHz, and a linear gain of 24 dB at 2 GHz. The 10W, 50V QPD1010 features an output power of 11W at 2 GHz and a linear gain of 24.7 dB at 2 GHz. These two devices are housed in low thermal resistance 3 x 3 mm packages, and are ideal for wideband or narrowband amplifiers, jammers, and for military radar, civilian radar, land mobile, military radio, and test instrumentation applications.

Qorvo offers a 500 W, internally matched discrete GaN on SiC HEMT operating in the 1.2 to 1.4 GHz range. This device is fully matched to 50 Ohm, can support pulsed and linear operations, and is ideal for civilian and military radar applications.

The Qorvo QPD1025L is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from .96to 1.215 GHz. Input prematch within the package results in ease of external board match and saves board space.

Qorvo offers the 1800 W, 65 V, 1.0 – 1.1 GHz QPD1025L as the highest GaN transistor on the market. This discrete GaN on SiC HEMT has a package that features input pre-match resulting in ease of external board match and saved board space.

Qorvo offers a large range of GaN on SiC power transistors as premiere solutions for GaN needs. These discrete power amplifiers are available in models that cover frequency ranges from DC-18 GHz. With a range of linear gain between 16.6 – 21 dB, and a saturated output power range between 37 and 54.2 dBm, these devices are ideal for a wide variety of broadband wireless, space, and military applications.

The Qorvo QPD1022 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz. This wideband device is a single stage unmatched power amplifier transistor in an over-molded plastic package. The wide bandwidth of the QPD1022 makes it suitable for many different applications from DC to 12 GHz.