Crystals

The Qorvo QPD1016 is a 500 W (P3dB) pre-matched discrete GaN on SiC HEMT which operates from DC to 1.7 GHz and 50 V supply.

The Taurus-X Line of X-band GaN SSPA Block Up Converter (BUCs) offer ideal solutions for both mobile and fixed communication systems. Designed for high efficiency, these BUCs operate with high performance and reliability within an optimal compact form factor.

Mimix Broadband’s two stage 17.0-21.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +38.0 dBm

The R&S®RTO6 is the oscilloscope you can trust. Engineered to deliver reliable results, it acts as a sophisticated laboratory companion to solve measurement problems fast and keep you on schedule. The R&S®RTO6 oscilloscope series leverages the engineer’s expertise and builds your measurement confidence by achieving deep insights, whenever needed.

The CHV2711 internally pre-matched power HBT device provides 9.5dB of gain, 2.5% EVM at 29.5 dBm output power for 802.16 OFDM signal with a peak to average power ratio of 9 dB. The device operates off a single supply voltage up to 12V and includes internal bias circuitry to enable exact setting of the quiescent current using an external Vcontrol...

GaAs push-pull power amplifier FETs for world standard 3rd generation wireless voice and data systems

The SMP1340 Series from Skyworks is a series of plastic-packaged, surface-mountable PIN diodes designed for high volume switch applications from 10 MHz to more than 10 GHz. The short carrier lifetime of 100 ns (typical), combined with their thin I-region width of 5 μm (nominal) results in a group of fast speed RF switching PIN diodes.

Qorvo offers the QPC6222 double-pole double-throw (DPDT) transfer switch designed for general purpose switching applications where RF port transfer control is needed, including data cards, IoT, telemetry, automotive, cellular modems, USB devices, and multi-mode WCDMA and LTE. Some key features for this switch are its low insertion loss, high linearity performance, high-port-to-port isolation, and power handling up to +35 dBm.