Crystals

The UJ4C075023L8S is a G4 SiC FET based on a unique ‘cascode’ circuit configuration where a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

The NuPower Xtender™ LS10S01-D30 is a small, lightweight, and power-efficient bidirectional amplifier ideal for extending the communication range of half-duplex L- or S-band transceivers running constant-envelope or near-constant-envelope waveforms.

Engineered for cellular phone and handheld PC (HPC) designs, the LM2685 integrates a switched capacitor doubler

The W2A series contains four capacitive elements in one 0508 chip

The QPC8015Q is a low insertion loss, high isolation single-pole dual-throw (SPDT) switch with performance optimized for low power routing and diversity applications. The QPC8015Q is controlled by 1 bit GPIO with a compact 0.7 mm x 1.1 mm x 0.59 mm size, which allows for a small solution size with no need for external DC blocking capacitors.

The ADM-8556 is a wideband low noise amplifier capable of providing 24 dB gain and a low 1.3 dB typical noise figure from 6 to 20 GHz.

Qorvo’s QPA2225D is a wide band MMIC driver amplifier fabricated on Qorvo’s production 0.15 um GaN on SiC process (QGaN15). Covering 28 – 38 GHz, the QPA2225D provides > 0.4 W of saturated output power with >23 dB of small-signal gain.

Qorvo offers the RFPD340 and RFPD3580 hybrid power doubler amplifier modules for CATV amplifier systems and DOCSIS 3.1 compliant applications in the 45 MHz to 1218 MHz CATV range. The devices employ GaAs pHEMT die and GaN HEMT die, and provide extremely high output up to 76.8 dBmV composite power or 67dBmV virtual level.