Crystals

Qorvo offers the QPB8957 GaAs pHEMT/MESFET 75-ohm doubler RF amplifier IC featuring over 28dB of flat gain and low noise. This IC is designed to support DOCSIS 3.1 applications up to 1003 MHz using a single 24V supply.

AR’s 100A400AM20 is a solid-sate amplifier covering the 4 kHz – 400 MHz frequency range. When used with a sweep generator, it typically provides 125 watts of RF power. Like most of AR’s amplifiers, this model is ideal for applications that call for instantaneous bandwidth and high gain.

Qorvo offers the QPB9325 highly integrated front-end module with operation in the 3.6 – 3.8 GHz frequency range ideally suited for TDD base station, wireless infrastructure, and macro or picocell base station applications. This LNA module integrates RF functional blocks such as a pin-diode based high power switch along with two LNA stages.

Two high-power, surface mount, 90° hybrid couplers are designed to operate in the 2.0 to 2.3 GHz CDMA cellular band

Knowles’ high-Q ceramic core inductors offer stable, efficient RF performance with high reliability, supporting applications in medical imaging, defense, aerospace, and industrial sectors.

Spanning 1 MHz to 2 GHz, the AQ12 and AQ14 series of ceramic dielectric multilayer capacitors includes chips with capacitance values from 1,000 to 10,000 pF

The AMM-7473PSM is a high-linearity, low noise distributed amplifier that can provide +25 dBm output power across its 400 MHz to 27 GHz band and features excellent gain flatness.

The XP1006 is a three-stage, X-band, single ended high power amplifier (HPA) with on-chip gate bias circuit. This HPA is designed in a 0.5 um pHEMT power process.