Crystals

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. 

This high-power millimeter-wave amplifier system is engineered for demanding EMI/RFI, laboratory, continuous-wave, pulsed, and advanced communication environments requiring wide instantaneous bandwidth and exceptional linearity.

The AMP20050 is a solid-state high-power amplifier designed for various applications. Operating at 4.0 - 8.0 GHz, it delivers a minimum of 20 Watts output power.

The SKY85780-11 is a highly integrated, front-end module (FEM) incorporating a single-pole, double-throw (SPDT) transmit/receive (T/R) switch, a high-gain low-noise amplifier (LNA) with bypass, and a power amplifier (PA) for high-power WiFi 6E applications and systems.

Rack mount amplifier systems cover wide frequency spectrums and offer diverse ranges of power table. These systems are used for communications, medical, scientific, and industrial applications.

The ADL8150 is a self biased gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), heterojunction bipolar transistor (HBT), low phase noise amplifier that operates from 6 GHz to 14 GHz. 

This compact clock timing module features low phase noise/jitter, internal and/or external reference, multiple outputs with high isolation between channels, less than 5 second lock time after applying main power, and Ethernet interface/RS232/USB remote operation options.

dB Control offers a new  dB-4150 smart microwave power module (MPM) consisting of a solid state amplifier and a vacuum power booster. It is designed to provide 100 Watts pulsed/CW RF output power, and operate in the 6 to 18 GHz frequency range.