Crystals

The CMPA2060035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) suited for ultra broadband amplifiers, fiber drivers, EMC amplifier drivers, and test instrument applications. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.

The Model 250S1G6C is a solid-state, Class A design, self-contained, air-cooled, broadband power amplifier designed for applications where instantaneous bandwidth, high gain and linearity are required. 

The AMP10132 Solid State High Power Amplifier boasts a Class A/AB linear GaN design, offering instantaneous ultra-broad bandwidth suitable for all single-channel modulation standards.

The RFPD3210 and the RFPD3220 are new Hybrid Power Doubler Amplifier modules from Qorvo operating within the 45 to 1218 MHz frequency range. Features include excellent linearity, high return loss performance, extremely low distortion, and low noise.

The AC52422 integrates a 50MHz Arm Cortex-M0 microcontroller, advanced power management, and enhanced features, optimizing smart energy appliances with compact, efficient, and highly configurable system-on-chip technology.

The MFBC-000XXCH family of passive MMIC bandpass filters are an ideal solution for small form factor, mmWave, high rejection filtering. Passive GaAs MMIC technology allows production of smaller filter constructions that replace larger form factor circuit board constructions.

The 50PMA-114 is a 5 port transceiver test system operating 30-3000 MHz in a 19 inch rack mount enclosure featuring 10 paths each with its own individually controlled programmable attenuator.  

The MFBP-00009PSM family of passive MMIC surface mount bandpass filters are an ideal solution for small form factor, high rejection filtering.