Crystals

The QPA9831 is a Hybrid Push Pull amplifier module. The part employs GaAs MESFET, GaAs pHEMT and GaN HEMT die and is operated from 45 MHz to 1218 MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability.

The AMP2010B Solid State High Power Amplifier is a versatile amplifier that can be used for various applications like EMI/RFI, lab experimentation, CW/Pulse, and communication purposes.

The VSS3607 GaN Solid State Amplifier uses GaN transistors to provide high gain, high efficiency, and excellent pulse fidelity for pulsed radar applications. This model is designed to operate in the 2.7-2.9 GHz frequency band.

Gaussian Optics Lens Antennas by Millitech feature high efficiency, low loss, a wide bandwidth, low sidelobes and VSWR, and an integral radome/lens. Polarization options are available.

The AMM-9862PSM is a compact, wideband gain block amplifier designed for high-performance RF applications.

Designed for a wide range of RF and microwave testing, the standard MicroWAVE6000 instrumentation suite features a 6-GHz source

Qorvo offers the 1800 W, 65 V, 1.0 – 1.1 GHz QPD1025L as the highest GaN transistor on the market. This discrete GaN on SiC HEMT has a package that features input pre-match resulting in ease of external board match and saved board space.

Qorvo offers a family of GaN transistors designed to serve a wide range of defense and commercial applications, including types of radar, communications, avionics, and test instrumentation. These transistors have an operating voltage of 50 V, are CW and pulsed capable, unmatched, and are lead-free and ROHS compliant.